Low rds on n channel enhancement mode mosfet suitable for rugged power switching HUAYI HY1515D device
Key Attributes
Model Number:
HY1515D
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
29mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3.8V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.447nF
Pd - Power Dissipation:
46W
Mfr. Part #:
HY1515D
Package:
TO-252-2L
Product Description
N-Channel Enhancement Mode MOSFET
The HY1515D is a reliable and rugged N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low RDS(ON) of 29 m (typ.) at VGS = 10V and is 100% avalanche tested. This device is available in Halogen-Free and Green (RoHS Compliant) versions, making it suitable for environmentally conscious designs. Applications include Uninterruptible Power Supply (UPS) systems and general power switching.
Product Attributes
- Brand: HYMEXA
- Model: HY1515D
- Package: TO-252-2L
- Certifications: RoHS Compliant, Halogen-Free
Technical Specifications
| Parameter | Test Conditions | Rating | Unit | Min | Typ. | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | 150 | V | ||||
| Gate-Source Voltage (VGSS) | 20 | V | ||||
| Maximum Junction Temperature (TJ) | 175 | C | ||||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||||
| Source Current-Continuous (IS) (Body Diode) | Tc=25C | 40 | A | |||
| Pulsed Drain Current (IDM) * | Tc=25C | 140 | A | |||
| Continuous Drain Current (ID) | Tc=25C | 40 | A | |||
| Continuous Drain Current (ID) | Tc=100C | 28.3 | A | |||
| Maximum Power Dissipation (PD) | Tc=25C | 93 | W | |||
| Maximum Power Dissipation (PD) | Tc=100C | 46 | W | |||
| Thermal Resistance, Junction-to-Case (RJC) | 1.6 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient (RJA) ** | 110 | C/W | ||||
| Single Pulsed-Avalanche Energy (EAS) *** | L=0.3mH | 283.5 | mJ | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 150 | V | |||
| Drain-to-Source Leakage Current (IDSS) | VDS=150V,VGS=0V | A | 1.0 | |||
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | A | 50 | |||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | V | 3.0 | 3.8 | 5.0 | |
| Gate-Source Leakage Current (IGSS) | VGS=20V,VDS=0V | nA | 100 | |||
| Drain-Source On-State Resistance (RDS(ON)) * | VGS=10V,IDS=20A | m | 29 | 35 | ||
| Diode Forward Voltage (VSD) * | ISD=20A,VGS=0V | V | 0.83 | 1.3 | ||
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | ns | 48 | |||
| Reverse Recovery Charge (Qrr) | nC | 78 | ||||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 2447 | |||
| Output Capacitance (Coss) | pF | 153 | ||||
| Reverse Transfer Capacitance (Crss) | pF | 41 | ||||
| Turn-on Delay Time (td(ON)) | VDD=100V,RG=2.5, IDS=20A,VGS=10V | ns | 28 | |||
| Turn-on Rise Time (Tr) | ns | 30 | ||||
| Turn-off Delay Time (td(OFF)) | ns | 95 | ||||
| Turn-off Fall Time (Tf) | ns | 40 | ||||
| Total Gate Charge (Qg) | VDS100V, VGS=10V ID=20A | nC | 56 | |||
| Gate-Source Charge (Qgs) | nC | 12 | ||||
| Gate-Drain Charge (Qgd) | nC | 18 | ||||
2409302231_HUAYI-HY1515D_C5186579.pdf
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