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quality 30V Dual N Channel MOSFET HSBB3214 Fast Switching with Low Gate Charge and Enhanced CdVdt Performance factory
quality 30V Dual N Channel MOSFET HSBB3214 Fast Switching with Low Gate Charge and Enhanced CdVdt Performance factory

30V Dual N Channel MOSFET HSBB3214 Fast Switching with Low Gate Charge and Enhanced CdVdt Performance

Key Attributes
Model Number: HSBB3214
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
153pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.175nF@15V
Pd - Power Dissipation:
26W
Gate Charge(Qg):
9.63nC@4.5V
Mfr. Part #:
HSBB3214
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3214 is a dual N-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: Dual N-Channel MOSFET
  • Voltage Rating: 30V
  • Switching Speed: Fast Switching
  • Technology: High cell density trenched
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSBB3214 Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250uA 30 --- --- V
BVDSS Temperature Coefficient Reference to 25, ID=1mA --- 0.023 --- V/
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=15A --- --- 12 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=10A --- --- 18 m
Gate Threshold Voltage (VGS(th)) VGS=VDS, ID=250uA 1.2 --- 2.5 V
VGS(th) Temperature Coefficient --- -5.08 --- mV/
Drain-Source Leakage Current (IDSS) VDS=24V, VGS=0V, TJ=25 --- --- 1 uA
Drain-Source Leakage Current (IDSS) VDS=24V, VGS=0V, TJ=55 --- --- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V, VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V, ID=15A --- 24 --- S
Gate Resistance (Rg) VDS=0V, VGS=0V, f=1MHz --- 1.8 ---
Total Gate Charge (Qg) (4.5V) VDS=15V, VGS=4.5V, ID=8A --- 9.63 --- nC
Gate-Source Charge (Qgs) --- 3.88 --- nC
Gate-Drain Charge (Qgd) --- 3.44 --- nC
Turn-On Delay Time (Td(on)) VDD=15V, VGS=10V, RG=1.5, ID=8A --- 4.2 --- ns
Rise Time (Tr) --- 8.2 --- ns
Turn-Off Delay Time (Td(off)) --- 31 --- ns
Fall Time (Tf) --- 4 --- ns
Input Capacitance (Ciss) VDS=15V, VGS=0V, f=1MHz --- 760 940 1175 pF
Output Capacitance (Coss) VDS=15V, VGS=0V, f=1MHz --- 92 131 163 pF
Reverse Transfer Capacitance (Crss) VDS=15V, VGS=0V, f=1MHz --- 76 109 153 pF
Continuous Source Current (IS) VG=VD=0V, Force Current --- --- --- 33 A
Diode Forward Voltage (VSD) VGS=0V, IS=1A, TJ=25 --- --- --- 1 V
Reverse Recovery Time (trr) IF=8A, di/dt=100A/s, TJ=25 --- 8 --- nS
Reverse Recovery Charge (Qrr) IF=8A, di/dt=100A/s, TJ=25 --- 2.9 --- nC
Absolute Maximum Ratings Drain-Source Voltage (VDS) --- --- 30 V
Gate-Source Voltage (VGS) --- --- 20 V
Continuous Drain Current (ID) @ TA=25, VGS @ 10V --- --- 33 A
Continuous Drain Current (ID) @ TA=70, VGS @ 10V --- --- 16 A
Thermal Data Pulsed Drain Current (IDM) --- --- 65 A
Single Pulse Avalanche Energy (EAS) --- --- 24.2 mJ
Avalanche Current (IAS) --- --- 22 A
Total Power Dissipation (PD) @ TA=25 --- --- 26 W
Storage Temperature Range (TSTG) -55 --- 150
Operating Junction Temperature Range (TJ) -55 --- 150
Thermal Resistance Junction-Ambient (RJA) --- --- 75 /W
Junction-Case (RJL) --- --- 8 /W

2410121517_HUASHUO-HSBB3214_C701032.pdf
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