High cell density N channel MOSFET HSK10N06 suitable for demanding industrial switching applications
Key Attributes
Model Number:
HSK10N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
40mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
226pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.427nF@25V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
HSK10N06
Package:
SOT-89
Product Description
Product Overview
The HSK10N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full function reliability, making it suitable for demanding industrial applications.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSK10N06 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 10 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 8 | A | |||
| Pulsed Drain Current (IDM) | 40 | A | ||||
| Avalanche Current (IAS) | 21 | A | ||||
| Total Power Dissipation (PD@TA=25) | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 75 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),MAX) | VGS=10V, ID=10A | 33 | 40 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),MAX) | VGS=4.5V, ID=5A | 38 | 50 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.1 | 2.0 | 3.0 | V | |
| VGS(th) Temperature Coefficient (VGS(th)) | -6 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V, TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=48V, VGS=0V, TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V, ID=5A | 15 | S | |||
| Total Gate Charge (Qg) | VDS=48V, VGS=10V, ID=10A | 53 | nC | |||
| Gate-Source Charge (Qgs) | 11 | nC | ||||
| Gate-Drain Charge (Qgd) | 44 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=30V, VGS=10V, RG=3, ID=10A | 16 | ns | |||
| Rise Time (Tr) | 221 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 44 | ns | ||||
| Fall Time (Tf) | 118 | ns | ||||
| Input Capacitance (Ciss) | VDS=25V, VGS=0V, f=1MHz | 3427 | pF | |||
| Output Capacitance (Coss) | 1330 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 226 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V, Force Current | 8 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | 0.81 | 1.4 | V |
| Ordering Information | Package Code | Packaging |
|---|---|---|
| HSK10N06 | SOT-89 | 1000/Tape&Reel |
2410121641_HUASHUO-HSK10N06_C5128195.pdf
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