High cell density trenched MOSFET HUASHUO HSBB3303 optimized for fast switching and power conversion
Key Attributes
Model Number:
HSBB3303
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
23mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
2 P-Channel
Output Capacitance(Coss):
194pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.345nF
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSBB3303
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3303 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for applications demanding efficient power conversion and high reliability.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS Compliant, Green Product
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent Cdv/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSBB3303 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=25 | -35 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TC=100 | -25 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TA=25 | -8.3 | A | |||
| Continuous Drain Current (ID) | -VGS @ -10V, TA=100 | -6.7 | A | |||
| Pulsed Drain Current (IDM) | -126 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 72.2 | mJ | ||||
| Avalanche Current (IAS) | -38 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 35 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 75 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 4.3 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-15A | 20 | 23 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-10A | 28 | 32 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.4 | -2.5 | V |
| Parameter | Conditions | Typ. | Max. | Unit |
|---|---|---|---|---|
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -35 | A | |
| Pulsed Source Current (ISM) | -126 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |
| Reverse Recovery Time (trr) | IF=-15A , dI/dt=100A/µs , TJ=25 | 19.3 | nS | |
| Reverse Recovery Charge (Qrr) | 11 | nC |
2411061707_HUASHUO-HSBB3303_C42376801.pdf
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