Power MOSFET HUAYI HY1420C2 with 31A Drain Current and RoHS Compliant Halogen Free Packaging Options
Key Attributes
Model Number:
HY1420C2
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
31A
RDS(on):
57mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
2.57nF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
HY1420C2
Package:
PDFN-8(5x6)
Product Description
Product Overview
The HY1420C2 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a breakdown voltage of 200V and a continuous drain current of 31A. Key advantages include low on-state resistance (RDS(ON)=57m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. This device is also available in Halogen Free and Green (RoHS Compliant) versions.
Product Attributes
- Brand: HYMEXA (implied by URL)
- Product Code: HY1420C2
- Package Type: PDFN8L (5x6)
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
- Origin: Huayi Microelectronics Co., Ltd.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 200 | V |
| Gate-Source Voltage | VGSS | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Maximum Junction Temperature | TJ | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 31 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 120 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 31 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 21 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 125 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 62.5 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 1.2 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on FR-4 board. | - | 50 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | - | 161.8 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250μA | 200 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=200V,VGS=0V | - | - | 1.0 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 3 | 3.7 | 5 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 57 | 72 | mΩ |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.84 | 1.3 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | - | 97.7 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 424.7 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 3.5 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2570 | - | pF |
| Output Capacitance | Coss | - | - | 199 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 97 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=100V,RG=4Ω, IDS=20A,VGS=10V | - | 15.8 | - | ns |
| Turn-on Rise Time | Tr | - | - | 39.7 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 33.4 | - | ns |
| Turn-off Fall Time | Tf | - | - | 35.3 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=160V, VGS=10V ID=20A | - | 53 | - | nC |
| Gate-Source Charge | Qgs | - | - | 15 | - | - |
| Gate-Drain Charge | Qgd | - | - | 19 | - | - |
2411220232_HUAYI-HY1420C2_C5121301.pdf
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