dual N channel 30V MOSFET HUASHUO HSM3214 designed for synchronous buck converter and power circuits
Key Attributes
Model Number:
HSM3214
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
153pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.175nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.63nC@4.5V
Mfr. Part #:
HSM3214
Package:
SOP-8
Product Description
Product Overview
The HSM3214 is a dual N-channel 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Description | VDS (V) | ID (A) | RDS(ON) Max (m) | Package | Ordering Information |
|---|---|---|---|---|---|---|
| HSM3214 | Dual N-Ch 30V Fast Switching MOSFETs | 30 | 10 (TA=25, VGS@10V) | 12 (VGS=10V, ID=8A) | SOP-8 | SOP-8, 4000/Tape&Reel |
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | -- | -- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=8A | -- | -- | 12 | m |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=6A | -- | -- | 18 | m |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID=250uA | 1.2 | -- | 2.5 | V |
| Drain-Source Leakage Current (IDSS) | VDS=24V, VGS=0V, TJ=25 | -- | -- | 1 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Total Gate Charge (Qg) | VDS=15V, VGS=4.5V, ID=8A | -- | 9.63 | -- | nC |
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1MHz | 760 | 940 | 1175 | pF |
| Output Capacitance (Coss) | VDS=15V, VGS=0V, f=1MHz | 92 | 131 | 163 | pF |
| Reverse Transfer Capacitance (Crss) | VDS=15V, VGS=0V, f=1MHz | 76 | 109 | 153 | pF |
| Continuous Source Current (IS) | VG=VD=0V | -- | -- | 9 | A |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | -- | -- | 1 | V |
| Reverse Recovery Time (trr) | IF=8A, di/dt=100A/s, TJ=25 | -- | 8 | -- | nS |
| Reverse Recovery Charge (Qrr) | IF=8A, di/dt=100A/s, TJ=25 | -- | 2.9 | -- | nC |
| Continuous Drain Current (ID) | TA=25, VGS @ 10V | -- | -- | 10 | A |
| Continuous Drain Current (ID) | TA=70, VGS @ 10V | -- | -- | 8 | A |
| Pulsed Drain Current (IDM) | -- | -- | 36 | A | |
| Single Pulse Avalanche Energy (EAS) | -- | -- | 24.2 | mJ | |
| Avalanche Current (IAS) | -- | -- | 22 | A | |
| Total Power Dissipation (PD) | TA=25 | -- | -- | 1.5 | W |
| Storage Temperature Range (TSTG) | -55 | -- | 150 | ||
| Operating Junction Temperature Range (TJ) | -55 | -- | 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | -- | -- | 85 | /W | |
| Thermal Resistance Junction-Case (RJL) | -- | -- | 25 | /W |
2410121516_HUASHUO-HSM3214_C508457.pdf
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