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quality Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion factory
quality Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion factory

Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion

Key Attributes
Model Number: HSCB2307
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
304pF
Number:
1 P-Channel
Output Capacitance(Coss):
489pF
Input Capacitance(Ciss):
2.1nF
Pd - Power Dissipation:
2.2W
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
HSCB2307
Package:
DFN-6L(2x2)
Product Description

Product Overview

The HSCB2307 is a P-channel 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Available as a Green Device.

Product Attributes

  • Brand: HS
  • Product Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage 12 V
ID@TA=25 Continuous Drain Current, VGS @ -4.5V -8 A
ID@TA=70 Continuous Drain Current, VGS @ -4.5V -6 A
IDM Pulsed Drain Current -24 A
PD@TA=25 Total Power Dissipation 3.5 W
PD@TA=70 Total Power Dissipation 2.2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient 36 /W
RJC Thermal Resistance Junction-Ambient 6.5 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 V
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-8A 15 18 m
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V , ID=-6A 18.5 23 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.45 -0.6 -1.2 V
IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25 -1 uA
IGSS Gate-Source Leakage Current VGS=12V , VDS=0V 100 nA
Qg Total Gate Charge VDS=-10V , VGS=-4.5V , ID=-8A 17 nC
Ciss Input Capacitance VDS=-10V , VGS=0V , f=1MHz 2100 pF
Coss Output Capacitance 489 pF
Crss Reverse Transfer Capacitance 304 pF
IS Continuous Source Current VG=VD=0V , Force Current -8 A
ISM Pulsed Source Current -24 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1.2 V

2410121532_HUASHUO-HSCB2307_C845602.pdf

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