N Channel MOSFET HUAYI HYG037N10LS2C2 with 100V drain source voltage and 105A current
Key Attributes
Model Number:
HYG037N10LS2C2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
105A
RDS(on):
5mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
206pF
Output Capacitance(Coss):
2.1nF
Input Capacitance(Ciss):
4.516nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
94nC@10V
Mfr. Part #:
HYG037N10LS2C2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The HYG037N10LS2C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It features a high current capability of 100V/105A with low on-resistance (RDS(ON)=3.0 m typ. @ VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS compliant). It is suitable for battery protection and general switching applications.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| TJ | Junction Temperature Range | -55 | 175 | °C | ||
| TSTG | Storage Temperature Range | -55 | 175 | °C | ||
| ID | Continuous Drain Current | Tc=25°C | 105 | A | ||
| ID | Continuous Drain Current | Tc=100°C | 74.2 | A | ||
| IDM | Pulsed Drain Current | Tc=25°C | 420 | A | ||
| PD | Maximum Power Dissipation | Tc=25°C | 75 | W | ||
| PD | Maximum Power Dissipation | Tc=100°C | 37.5 | W | ||
| RθJC | Thermal Resistance, Junction-to-Case | 2 | °C/W | |||
| RθJA | Thermal Resistance, Junction-to-Ambient | 45 | °C/W | |||
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH | 350 | mJ | ||
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= 250μA | 100 | V | ||
| IDSS | Drain-to-Source Leakage Current | VDS= 100V,VGS=0V | 1 | μA | ||
| IDSS | Drain-to-Source Leakage Current | TJ=125°C | 50 | μA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250μA | 1.2 | 1.6 | 2.5 | V |
| IGSS | Gate-Source Leakage Current | VGS=±20V,VDS=0V | ±100 | nA | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS=20A | 3.0 | 3.7 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 4.5V,IDS=20A | 4.1 | 5 | mΩ | |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=20A,VGS=0V | 0.78 | 1.2 | V | |
| trr | Reverse Recovery Time | ISD=20A,dISD/dt=100A/μs | 60 | ns | ||
| Qrr | Reverse Recovery Charge | 91 | nC | |||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 2.4 | Ω | ||
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | 4516 | pF | ||
| Coss | Output Capacitance | 2100 | pF | |||
| Crss | Reverse Transfer Capacitance | 206 | pF | |||
| td(ON) | Turn-on Delay Time | VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V | 15 | ns | ||
| Tr | Turn-on Rise Time | 37 | ns | |||
| td(OFF) | Turn-off Delay Time | 76 | ns | |||
| Tf | Turn-off Fall Time | 95 | ns | |||
| Gate Charge Characteristics | ||||||
| Qg(10V) | Total Gate Charge | VDS = 80V, VGS= 10V, IDs= 20A | 94 | nC | ||
| Qg(4.5V) | Total Gate Charge | 50 | nC | |||
| Qgs | Gate-Source Charge | 15 | nC | |||
| Qgd | Gate-Drain Charge | 25 | nC | |||
2409271703_HUAYI-HYG037N10LS2C2_C3025196.pdf
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