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quality 40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design factory
quality 40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design factory

40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design

Key Attributes
Model Number: HSM4103
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
102pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.415nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
HSM4103
Package:
SOP-8
Product Description

Product Overview

The HSM4103 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Green Device Available
  • 100% EAS Guaranteed
  • Meets RoHS and Green Product requirements

Technical Specifications

Product Summary HSM4103 P-Ch 40V Fast Switching MOSFETs
Symbol Parameter Rating Units
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V -8 A
ID@TA=70 Continuous Drain Current, VGS @ -10V -6.9 A
IDM Pulsed Drain Current -32 A
EAS Single Pulse Avalanche Energy 41 mJ
IAS Avalanche Current -28.6 A
PD@TA=25 Total Power Dissipation 1.5 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA --- -0.02 --- V/
RDS(ON),max Static Drain-Source On-Resistance VGS=-10V , ID=-5A --- --- 32 m
VGS=-4.5V , ID=-4A --- --- 46 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 --- -2.5 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient --- 3.72 --- V/
IDSS Drain-Source Leakage Current VDS=-32V , VGS=0V , TJ=25 --- --- -1 uA
VDS=-32V , VGS=0V , TJ=55 --- --- -5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-8A --- 10.7 --- S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-1A --- 11.5 --- nC
Qgs Gate-Source Charge --- 3.5 --- nC
Qgd Gate-Drain Charge --- 3.3 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A --- 22 --- ns
Tr Rise Time --- 15.7 --- ns
Td(off) Turn-Off Delay Time --- 59 --- ns
Tf Fall Time --- 5.5 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1415 --- pF
Coss Output Capacitance --- 134 --- pF
Crss Reverse Transfer Capacitance --- 102 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- -8 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- --- -1.2 V
Package code Packaging
SOP-8 2500/Tape&Reel

2410121448_HUASHUO-HSM4103_C700982.pdf
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