Power Management Applications Using HUASHUO HSM0903 N Channel and P Channel Fast Switching MOSFET
Key Attributes
Model Number:
HSM0903
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF@30V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
1.229nF@30V
Gate Charge(Qg):
-
Mfr. Part #:
HSM0903
Package:
SOP-8
Product Description
Product Overview
The HSM0903 is a series of N-Channel and P-Channel Fast Switching MOSFETs designed for high-efficiency power management applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology. They are suitable for DC motor control and general power management tasks. Available in Green Device configuration.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Availability: Green Device Available
Technical Specifications
| HSM0903 N-Channel MOSFET | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 100 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 3 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 2.4 | A | ||
| IDM | Pulsed Drain Current2 | 10 | A | ||
| EAS | Single Pulse Avalanche Energy3 | 25 | mJ | ||
| IAS | Avalanche Current | 10 | A | ||
| PD@TA=25 | Total Power Dissipation4 | 2.1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | --- | 100 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | 60 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=2.5A | --- | 100 | m |
| VGS=4.5V , ID=2A | --- | 125 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | --- | 1 | uA |
| VDS=80V , VGS=0V , TJ=55 | --- | 30 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA |
| Qg | Total Gate Charge (4.5V) | VDS=50V , VGS=4.5V , ID=2A | --- | 15 | nC |
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=1A | --- | 8 | ns |
| Tr | Rise Time | --- | 12 | ns | |
| Td(off) | Turn-Off Delay Time | --- | 20 | ns | |
| Tf | Fall Time | --- | 6 | ns | |
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 990 | pF |
| Coss | Output Capacitance | --- | 36 | pF | |
| Crss | Reverse Transfer Capacitance | --- | 24 | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 2 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V |
| HSM0903 P-Channel MOSFET | |||||
|---|---|---|---|---|---|
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | -100 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -2.1 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -1.7 | A | ||
| IDM | Pulsed Drain Current2 | -10 | A | ||
| EAS | Single Pulse Avalanche Energy3 | 49 | mJ | ||
| IAS | Avalanche Current | -14 | A | ||
| PD@TA=25 | Total Power Dissipation4 | 2.1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | --- | 100 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | 60 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -100 | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-2A | --- | 220 | m |
| VGS=-4.5V , ID=-1.6A | --- | 255 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | 1 | uA |
| VDS=-80V , VGS=0V , TJ=55 | --- | 30 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA |
| Qg | Total Gate Charge (-10V) | VDS=-50V , VGS=-10V , ID=-2A | --- | 19 | nC |
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=3.3, ID=-1A | --- | 9 | ns |
| Tr | Rise Time | --- | 6 | ns | |
| Td(off) | Turn-Off Delay Time | --- | 38 | ns | |
| Tf | Fall Time | --- | 33 | ns | |
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , f=1MHz | --- | 1229 | pF |
| Coss | Output Capacitance | --- | 41 | pF | |
| Crss | Reverse Transfer Capacitance | --- | 29 | pF | |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -1.5 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V |
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM0903 | SOP-8 | 2500/Tape&Reel |
Applications:
- Power Management
- DC Motor Control
Key Features:
- Super Low Gate Charge
- 100% EAS Guaranteed
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Notes:
- 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Tested by pulsed, pulse width 300s, duty cycle 2%.
- 3 EAS data shows Max. rating. Test conditions for N-Channel: VDD=25V, VGS=10V, L=0.5mH, IAS=10A. Test conditions for P-Channel: VDD=-25V, VGS=-10V, L=0.5mH, IAS=-14A.
- 4 Power dissipation is limited by 150 junction temperature.
- 5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121637_HUASHUO-HSM0903_C2903558.pdf
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