Low On Resistance N Channel MOSFET HUAYI HY3810B6 Suitable for High Current and Voltage Applications
Key Attributes
Model Number:
HY3810B6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
218A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
630pF
Number:
1 N-channel
Output Capacitance(Coss):
967pF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
7.874nF
Gate Charge(Qg):
208nC@10V
Mfr. Part #:
HY3810B6
Package:
TO-263-6
Product Description
Product Overview
The HY3810B6 is a N-Channel Enhancement Mode MOSFET designed for switch applications and brushless motor drives. It features high voltage and current ratings, low on-state resistance, 100% avalanche tested, and a reliable, rugged design. Halogen-free and green device options are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Package Type: TO-263-6L
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-free (matte tin plate termination finish)
Technical Specifications
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGSS | Gate-Source Voltage | V | 25 | |||
| TJ | Maximum Junction Temperature | C | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| IS | Source Current-Continuous(Body Diode) | Mounted on Large Heat Sink | A | 218 | ||
| IDM | Pulsed Drain Current * | A | 785 | |||
| ID | Continuous Drain Current | Tc=25C | A | 218 | ||
| ID | Continuous Drain Current | Tc=100C | A | 154 | ||
| PD | Maximum Power Dissipation | Tc=25C | W | 375 | ||
| PD | Maximum Power Dissipation | Tc=100C | W | 187 | ||
| RJC | Thermal Resistance, Junction-to-Case | C/W | 0.40 | |||
| RJA | Thermal Resistance, Junction-to-Ambient ** | Surface mounted on FR-4 board. | C/W | 40 | ||
| EAS | Single Pulsed-Avalanche Energy *** | L=0.5mH | mJ | 1204 | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | V | 100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | A | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | A | - | - | 50 |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=25V,VDS=0V | nA | - | - | 100 |
| RDS(ON)* | Drain-Source On-State Resistance | VGS=10V,IDS=90A | m | - | 3.7 | 4.4 |
| Diode Characteristics | ||||||
| VSD* | Diode Forward Voltage | ISD=90A,VGS=0V | V | - | 0.8 | 1.2 |
| trr | Reverse Recovery Time | ISD=90A,dISD/dt=100A/s | ns | - | 65 | - |
| Qrr | Reverse Recovery Charge | nC | - | 103 | - | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1 MHz | - | 1.5 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | - | 7874 | - |
| Coss | Output Capacitance | pF | - | 967 | - | |
| Crss | Reverse Transfer Capacitance | pF | - | 630 | - | |
| td(ON) | Turn-on Delay Time | VDD=50V,RG=6, IDS=90A,VGS=10V | ns | - | 28 | - |
| Tr | Turn-on Rise Time | ns | - | 45 | - | |
| td(OFF) | Turn-off Delay Time | ns | - | 85 | - | |
| Tf | Turn-off Fall Time | ns | - | 50 | - | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS =80V, VGS=10V, ID=90A | nC | - | 208 | - |
| Qgs | Gate-Source Charge | nC | - | 35 | - | |
| Qgd | Gate-Drain Charge | nC | - | 74 | - | |
2410121739_HUAYI-HY3810B6_C2931348.pdf
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