Fast switching 80V P channel MOSFET HUASHUO HSH8119 featuring trench technology and low gate charge for converters
Key Attributes
Model Number:
HSH8119
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
210W
Input Capacitance(Ciss):
13.3nF
Gate Charge(Qg):
190nC
Mfr. Part #:
HSH8119
Package:
TO-263
Product Description
Product Overview
The HSH8119 is a P-channel, 80V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 80V
- Switching Speed: Fast Switching
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -80 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -90 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -60 | A | |||
| IDM | Pulsed Drain Current2 | -270 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 710 | mJ | |||
| IAS | Avalanche Current | 63 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 210 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.73 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -80 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-20A | 13.5 | 15 | m | |
| VGS=-4.5V , ID=-10A | 14.5 | 17 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-80V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-80V , VGS=0V , TJ=55 | --- | 10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate Resistance | VGS=0V, VDS=0V, f=1.0MHz | 1.7 | --- | ||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 30 | --- | S | |
| Qg | Total Gate Charge | VDS=-40V , VGS=-10V , ID=-10A | 190 | --- | nC | |
| Qgs | Gate-Source Charge | 29 | --- | |||
| Qgd | Gate-Drain Charge | 55 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 25 | --- | ns | |
| tr | Rise Time | 20 | --- | |||
| td(off) | Turn-Off Delay Time | 180 | --- | |||
| tf | Fall Time | 88 | --- | |||
| Ciss | Input Capacitance | VDS=-40V , VGS=0V , f=1MHz | 13300 | --- | pF | |
| Coss | Output Capacitance | 390 | --- | |||
| Crss | Reverse Transfer Capacitance | 50 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -90 | A | |
| ISM | Pulsed Source Current2,5 | --- | -270 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
| trr | Reverse Recovery Time | IF=-20A, di/dt=100A/s | 35 | --- | ns | |
| Qrr | Reverse Recovery Charge | IF=-20A, di/dt=100A/s | 45 | --- | nC | |
2410122016_HUASHUO-HSH8119_C22359320.pdf
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