Trench Technology N Channel MOSFET HUASHUO HSBA90N15 with 150V Drain Source Voltage and Green Device
Key Attributes
Model Number:
HSBA90N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
9.8mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
25pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
4.18nF@75V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
39nC@4.5V
Mfr. Part #:
HSBA90N15
Package:
PRPAK5x6-8
Product Description
Product Overview
The HSBA90N15 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring a 150V drain-source voltage and a super low RDS(ON), it offers advanced high cell density Trench technology for efficient power management. This MOSFET is 100% EAS guaranteed and available as a Green Device, making it suitable for load switching, LED applications, networking, and quick chargers.
Product Attributes
- Brand: HS-Semi
- Technology: Trench
- Device Type: N-Channel MOSFET
- Features: Fast Switching, Super Low RDS(ON), 100% EAS Guaranteed, Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSBA90N15 | Drain-Source Voltage (VDS) | 150 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 75 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 45 | A | |||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 9.8 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 7.8 | A | |||
| Pulsed Drain Current (IDM) | 180 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 430 | mJ | ||||
| Avalanche Current (IAS) | 41 | A | ||||
| Total Power Dissipation (PD@TC=25) | 125 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 150 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A | 9.8 | 13 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | 11 | 15 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=120V , VGS=0V , TJ=125 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.4 | ||||
| Total Gate Charge (Qg) | VDS=75V , VGS=4.5V , ID=20A | 39 | nC | |||
| Gate-Source Charge (Qgs) | 15 | nC | ||||
| Gate-Drain Charge (Qgd) | 18 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=75V , VGS=10V , RG=6, ID=1A | 12 | ns | |||
| Rise Time (Tr) | 15 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 88 | ns | ||||
| Fall Time (Tf) | 149 | ns | ||||
| Input Capacitance (Ciss) | VDS=75V , VGS=0V , f=1MHz | 4180 | pF | |||
| Output Capacitance (Coss) | 291 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 25 | pF | ||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 71 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | If=20A, di/dt=100A/us,Tj=25 | 76 | nS | |||
| Reverse Recovery Charge (Qrr) | 250 | nC | ||||
| Thermal Resistance Junction-Ambient (RJA) | 55 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 1 | /W |
Applications
- Load Switch
- LED Applications
- Networking Applications
- Quick Charger
2410121656_HUASHUO-HSBA90N15_C7543700.pdf
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