N Channel MOSFET HUASHUO HSBA6054 ideal for synchronous rectifier motor control and power conversion
Key Attributes
Model Number:
HSBA6054
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
25pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
760pF@30V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
HSBA6054
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA6054 is a N-Channel MOSFET designed for fast switching applications. It features advanced trench MOS technology, low gate charge, and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. This device is 100% EAS guaranteed and available in a Green Device option.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS Technology
- Availability: Green Device Available
Technical Specifications
| Model | Package | Packaging |
|---|---|---|
| HSBA6054 | PRPAK5*6 | 3000/Tape&Reel |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | 1 | 33 | A | ||
| ID@TC=100 | Continuous Drain Current | 1 | 21 | A | ||
| IDM | Pulsed Drain Current | 2 | 100 | A | ||
| EAS | Single Pulse Avalanche Energy | 3 | 54 | mJ | ||
| IAS | Avalanche Current | 33 | A | |||
| PD@TC=25 | Total Power Dissipation | 4 | 21 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case | 1 | --- | 6 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=30A 2 | 8 | 12 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=20A 2 | 13 | 18 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.0 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=12A | 16 | --- | nC | |
| Qgs | Gate-Source Charge | 3.1 | --- | nC | ||
| Qgd | Gate-Drain Charge | 4.4 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=12A | 5.8 | --- | ns | |
| Tr | Rise Time | 3.6 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 26 | --- | ns | ||
| Tf | Fall Time | 3.3 | --- | ns | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 760 | --- | pF | |
| Coss | Output Capacitance | 278 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 25 | --- | pF | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current 1,5 | --- | 33 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 2 | --- | 1.2 | V |
Notes:
- 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=33A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121655_HUASHUO-HSBA6054_C5341690.pdf
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