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quality N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss factory
quality N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss factory

N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss

Key Attributes
Model Number: HSW2N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
480mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
33pF
Input Capacitance(Ciss):
350pF
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
8.3nC@10V
Mfr. Part #:
HSW2N15
Package:
SOT-23-6L
Product Description

Product Overview

The HSW2N15 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and offers features such as super low gate charge and excellent Cdv/dt effect decline, thanks to its advanced high cell density trench technology. It is a green device available with full function reliability approved.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Product
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 1.4 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 0.88 A
IDM Pulsed Drain Current2 5.6 A
PD@TA=25 Total Power Dissipation3 1.56 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient(steady state)1 --- 80 /W
RJA Thermal Resistance Junction-ambient(t<10s)1 --- 43 /W
Product Summary
Model HSW2N15 N-Ch 150V Fast Switching MOSFETs
VDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V
ΔVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.122 --- V/
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=1A --- 380 480 m
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=6V , ID=0.5A --- 410 520 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient --- -4.84 --- mV/
IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=55 --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Qg Total Gate Charge (10V) VDS=75V , VGS=10V , ID=1A --- 8.3 --- nC
Qgs Gate-Source Charge --- 2 --- nC
Qgd Gate-Drain Charge --- 2.3 --- nC
Td(on) Turn-On Delay Time VDD=75V , VGS=10V , RG=10
ID=1A		 --- 8.3 --- ns
Tr Rise Time --- 5.8 --- ns
Td(off) Turn-Off Delay Time --- 15 --- ns
Tf Fall Time --- 8 --- ns
Ciss Input Capacitance VDS=25V , VGS=0V , f=1MHz --- 350 --- pF
Coss Output Capacitance --- 33 --- pF
Crss Reverse Transfer Capacitance --- 25 --- pF
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 1.4 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1 V
trr Reverse recovery time IS=1A,di/dt=100A/us --- 43 --- ns
Qrr Reverse recovery Charge --- 38 --- nC

2409291004_HUASHUO-HSW2N15_C2828483.pdf
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