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quality N Channel MOSFET Fast Switching 100V Device HUASHUO HSL0004 Suitable for Electronic Applications factory
quality N Channel MOSFET Fast Switching 100V Device HUASHUO HSL0004 Suitable for Electronic Applications factory

N Channel MOSFET Fast Switching 100V Device HUASHUO HSL0004 Suitable for Electronic Applications

Key Attributes
Model Number: HSL0004
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
52pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.149nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
36.7nC@10V
Mfr. Part #:
HSL0004
Package:
SOT-223
Product Description

HSL0004 N-Ch 100V Fast Switching MOSFETs

Product Overview

The HSL0004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements, ensuring full function reliability.

Product Attributes

  • Brand: HS-Semi
  • Type: N-Channel MOSFET
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 3 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 2.5 A
IDM Pulsed Drain Current2 10 A
PD@TA=25 Total Power Dissipation3 1.5 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient --- 85 /W
RJC Thermal Resistance Junction-Case1 --- 30 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=2A 90 112 m
VGS=4.5V , ID=1A 95 120 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- 1 uA
VDS=80V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=2A 20 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 2 4
Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=2A 26.2 36.7 nC
Qgs Gate-Source Charge 3.8 5.32
Qgd Gate-Drain Charge 4.8 6.7
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3
ID=2A		 4.2 8.4 ns
Tr Rise Time 7.6 14
Td(off) Turn-Off Delay Time 41 82
Tf Fall Time 14 28
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 1535 2149 pF
Coss Output Capacitance 60 84
Crss Reverse Transfer Capacitance 37 52
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- 2.5 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=2A , dI/dt=100A/s , TJ=25 --- 35 nS
Qrr Reverse Recovery Charge --- 17 nC

Notes:

  • 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
  • 3. The power dissipation is limited by 150 junction temperature.
  • 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121655_HUASHUO-HSL0004_C508454.pdf
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