Power Switching N Channel MOSFET HUAYI HYG101N10LA1D 100V Drain Source Voltage 15A Continuous Current
Key Attributes
Model Number:
HYG101N10LA1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
1.072nF
Pd - Power Dissipation:
51.7W
Gate Charge(Qg):
26nC
Mfr. Part #:
HYG101N10LA1D
Package:
TO-252-2L
Product Description
Product Overview
The HYG101N10LA1D is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a 100V drain-source voltage and 15A continuous drain current with a low on-resistance of 80 m typ. at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available. It is suitable for hard switched and high-frequency circuits.
Product Attributes
- Brand: HYMEXTM
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free and Green Devices Available
Technical Specifications
| Parameter | Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | 175 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 175 | °C | ||
| Source Current-Continuous (IS) | Tc=25°C, Mounted on Large Heat Sink | 32 | A | ||
| Pulsed Drain Current (IDM) | Tc=25°C | 32 | A | ||
| Continuous Drain Current (ID) | Tc=25°C | 15 | A | ||
| Continuous Drain Current (ID) | Tc=100°C | 10.6 | A | ||
| Maximum Power Dissipation (PD) | Tc=25°C | 51.7 | W | ||
| Maximum Power Dissipation (PD) | Tc=100°C | 25.8 | W | ||
| Thermal Resistance, Junction-to-Case (RθJC) | 2.9 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient (RθJA) | Surface mounted on FR-4 board | 110 | °C/W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.3mH | 9.71 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250µA | 100 | - | - | V |
| Drain-to-Source Leakage Current (IDSS) | VDS=100V,VGS=0V | - | 1.0 | µA | |
| Drain-to-Source Leakage Current (IDSS) | TJ=125°C | - | 50 | µA | |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250µA | 1.0 | 2.0 | 3.0 | V |
| Gate-Source Leakage Current (IGSS) | VGS=±20V,VDS=0V | - | ±100 | nA | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=10A | 80 | 100 | mΩ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=4.5V,IDS=7A | 125 | 150 | mΩ||
| Diode Forward Voltage (VSD) | ISD=10A,VGS=0V | 0.8 | 1.3 | V | |
| Reverse Recovery Time (trr) | ISD=10A,dISD/dt=100A/μs | 26.8 | - | ns | |
| Reverse Recovery Charge (Qrr) | 34.5 | - | nC|||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 1072 | - | pF||
| Output Capacitance (Coss) | 62 | - | pF|||
| Reverse Transfer Capacitance (Crss) | 15 | - | pF|||
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=4Ω, IDS=10A,VGS=10V | 8.5 | - | ns | |
| Turn-on Rise Time (Tr) | 21.8 | - | ns | ||
| Turn-off Delay Time (td(OFF)) | 23.4 | - | ns | ||
| Turn-off Fall Time (Tf) | 24.9 | - | ns | ||
| Total Gate Charge (Qg) | VDS=80V, VGS=10V, ID=10A | 26 | - | nC||
| Gate-Source Charge (Qgs) | 6 | - | nC|||
| Gate-Drain Charge (Qgd) | 8 | - | nC|||
2409302203_HUAYI-HYG101N10LA1D_C2840473.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
