power management dual N channel MOSFET HUASHUO HSSK6303 featuring fast switching and low gate charge
Key Attributes
Model Number:
HSSK6303
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
450mΩ@4.5V,500mA
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
9pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
50pF@10V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
1.64nC@4.5V
Mfr. Part #:
HSSK6303
Package:
SOT-363
Product Description
Product Overview
The HSSK6303 is a dual N-channel 20V fast switching MOSFET designed to offer an optimal balance of rapid switching speeds, low on-resistance, and cost-effectiveness. It meets RoHS and Green Product requirements with full functional reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology, making it suitable for applications requiring efficient power management.
Product Attributes
- Brand: WILLAS
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Device Type: Dual N-channel MOSFET
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | ±8 | V | |||
| Continuous Drain Current (ID@TA=25) | (Note 1) | 0.5 | A | ||
| Pulsed Drain Current (IDM) | (Note 2) | 1.5 | A | ||
| Total Power Dissipation (PD@TA=25) | (Note 3) | 0.3 | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Data | |||||
| Thermal Resistance Junction-ambient (RJA) | --- | 415 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=4.5V , ID=0.5A | 340 | 450 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=0.2A | 440 | 600 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.65 | 0.8 | 1.5 | V |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | --- | 1 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=±12V , VDS=0V | --- | ±10 | uA | |
| Forward Transconductance (gfs) | VDS=5V , ID=0.5A | 1.45 | --- | S | |
| Total Gate Charge (Qg) | VDS=5V , VGS=4.5V , ID=0.5A (Note 4.5V) | 1.64 | --- | nC | |
| Gate-Source Charge (Qgs) | 0.38 | --- | |||
| Gate-Drain Charge (Qgd) | 0.45 | --- | |||
| Turn-On Delay Time (Td(on)) | VDD=5V , VGS=4.5V , RG=50 , ID=0.5A | 3 | --- | ns | |
| Rise Time (Tr) | 8.2 | --- | |||
| Turn-Off Delay Time (Td(off)) | 17 | --- | |||
| Fall Time (Tf) | 13 | --- | |||
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | 50 | --- | pF | |
| Output Capacitance (Coss) | 28 | --- | |||
| Reverse Transfer Capacitance (Crss) | 9 | --- | |||
| Diode Characteristics | |||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current (Note 1,4) | --- | 0.25 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 (Note 2) | --- | 1.2 | V | |
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSSK6303 | SOT-363 | Tape&Reel | 3000 |
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121434_HUASHUO-HSSK6303_C700946.pdf
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