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quality HSU4004 Fast Switching N Channel MOSFET with Excellent CdV dt Effect Decline and Low Gate Charge factory
quality HSU4004 Fast Switching N Channel MOSFET with Excellent CdV dt Effect Decline and Low Gate Charge factory

HSU4004 Fast Switching N Channel MOSFET with Excellent CdV dt Effect Decline and Low Gate Charge

Key Attributes
Model Number: HSU4004
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
42A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.314nF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
10.7nC@4.5V
Mfr. Part #:
HSU4004
Package:
TO-252-2
Product Description

Product Overview

The HSU4004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Type: N-Channel MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

HSU4004 N-Ch 40V Fast Switching MOSFETs
Symbol Parameter Rating Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 42 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 26 A
ID@TA=25 Continuous Drain Current, VGS @ 10V 10 A
ID@TA=70 Continuous Drain Current, VGS @ 10V 8 A
IDM Pulsed Drain Current 100 A
EAS Single Pulse Avalanche Energy 31 mJ
IAS Avalanche Current 25 A
PD@TC=25 Total Power Dissipation 34.7 W
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Thermal Data
RJA Thermal Resistance Junction-ambient (Steady State) 62 /W
RJC Thermal Resistance Junction-Case 3.6 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage 40 V
RDS(ON),TYP Static Drain-Source On-Resistance 9.5 m
VGS(th) Gate Threshold Voltage 1.0 - 2.5 V
IDSS Drain-Source Leakage Current 1 uA
IGSS Gate-Source Leakage Current 100 nA
Qg Total Gate Charge (4.5V) 10.7 nC
Td(on) Turn-On Delay Time 8.6 ns
Tr Rise Time 3.4 ns
Td(off) Turn-Off Delay Time 25 ns
Tf Fall Time 2.2 ns
Ciss Input Capacitance 1314 pF
Coss Output Capacitance 120 pF
Crss Reverse Transfer Capacitance 88 pF
Diode Characteristics
IS Continuous Source Current 42 A
ISM Pulsed Source Current 100 A
VSD Diode Forward Voltage 1.2 V
Ordering Information
Part Number Package code Packaging
HSU4004 TO252-2 2500/Tape&Reel

Notes:

  • 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  • 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=25A.
  • 4. Power dissipation is limited by 150 junction temperature.
  • 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2410121517_HUASHUO-HSU4004_C845612.pdf
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