250V N channel MOSFET HUASHUO HSP044N25 featuring low gate charge and performance for power electronics applications
Key Attributes
Model Number:
HSP044N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
429pF
Number:
1 N-channel
Output Capacitance(Coss):
8.547nF
Input Capacitance(Ciss):
8.547nF@50V
Pd - Power Dissipation:
325W
Gate Charge(Qg):
155nC@10V
Mfr. Part #:
HSP044N25
Package:
TO-220
Product Description
Product Overview
The HSP044N25 is a high-performance N-channel 250V fast switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSP044N25 | Drain-Source Voltage (VDS) | 250 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 50 | A | ||||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 34 | A | ||||
| Pulsed Drain Current (IDM) | 2 | 195 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 3 | 165 | mJ | ||||
| Total Power Dissipation (PD@TC=25) | 3 | 325 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 175 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 175 | |||||
| Thermal Resistance Junction-ambient (RJA) | 1 | --- | 60 | /W | |||
| Thermal Resistance Junction-Case (RJC) | 1 | --- | 0.48 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 250 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=50A | 2 | --- | 44 | m | ||
| HSP044N25 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 3 | 5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=150V , VGS=0V , TJ=25 | --- | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=150V , VGS=0V , TJ=125 | --- | 100 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | |||
| Forward Transconductance (gfs) | VDS=10V , ID=20A | --- | 75 | --- | S | ||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | --- | |||
| Total Gate Charge (Qg) | VDS=50V , VGS=10V , ID=40A (10V) | --- | 155 | --- | nC | ||
| Gate-Source Charge (Qgs) | --- | 23 | --- | nC | |||
| Gate-Drain Charge (Qgd) | --- | 45 | --- | nC | |||
| Turn-On Delay Time (td(on)) | VDD=50V , VGS=10V , RG=3.3 ID=40A | --- | 33 | --- | ns | ||
| Rise Time (tr) | --- | 8.2 | --- | ns | |||
| Turn-Off Delay Time (td(off)) | --- | 65 | --- | ns | |||
| HSP044N25 | Fall Time (tf) | --- | 6 | --- | ns | ||
| Input Capacitance (Ciss) | VDS=50V , VGS=0V , f=1MHz | --- | 8547 | --- | pF | ||
| Output Capacitance (Coss) | --- | 429 | --- | pF | |||
| HSP044N25 | Reverse Transfer Capacitance (Crss) | --- | 85 | --- | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current 1,5 | --- | --- | 50 | A | ||
| HSP044N25 | Diode Forward Voltage (VSD) | VGS=0V , IS=20A , TJ=25 2 | --- | 1.2 | V | ||
| Reverse Recovery Time (trr) | IF=40A , dI/dt=100A/s , TJ=25 | --- | 157 | --- | nS | ||
| HSP044N25 | Reverse Recovery Charge (Qrr) | --- | 1073 | --- | nC |
2410122017_HUASHUO-HSP044N25_C28314524.pdf
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