P Channel MOSFET HYG400P10LR1D Featuring 100V 40A Drain Current and Low RDS ON for DC DC Converters
Key Attributes
Model Number:
HYG400P10LR1D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
63mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
111pF
Number:
-
Output Capacitance(Coss):
189pF
Input Capacitance(Ciss):
5.003nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
83.1nC@10V
Mfr. Part #:
HYG400P10LR1D
Package:
TO-252-2
Product Description
Product Overview
The HYG400P10LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a -100V/-40A rating, low on-resistance (RDS(ON) as low as 42m typ. at VGS = -10V), 100% avalanche tested, and a reliable, rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions. It is ideal for portable equipment, battery-powered systems, DC-DC converters, and motor control applications.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Model | Package Type | Drain-Source Voltage (VDSS) | Gate-Source Voltage (VGSS) | Continuous Drain Current (ID) @ Tc=25C (A) | RDS(ON) @ VGS=-10V (m) | RDS(ON) @ VGS=-4.5V (m) | Max. Junction Temperature (TJ) (C) | Avalanche Energy (EAS) (mJ) |
| HYG400P10LR1D | TO-252-2L | -100 | 20 | -40 | 42 (typ.) | 48 (typ.) | 175 | 270 |
| HYG400P10LR1U | TO-251-3L | -100 | 20 | -40 | 42 (typ.) | 48 (typ.) | 175 | 270 |
| HYG400P10LR1V | TO-251-3S | -100 | 20 | -40 | 42 (typ.) | 48 (typ.) | 175 | 270 |
2411192312_HUAYI-HYG400P10LR1D_C2827248.pdf
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