Fast switching N Channel and P Channel MOSFETs HUASHUO HSM4606B with excellent CdV dt effect decline
Key Attributes
Model Number:
HSM4606B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
18mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
87pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
906pF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.5nC@10V
Mfr. Part #:
HSM4606B
Package:
SOP-8
Product Description
Product Overview
The HSM4606B is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSM4606B meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent decline of CdV/dt effect, enabled by advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch and P-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Part Number | N-Ch VDS (V) | N-Ch ID@TA=25 (A) | N-Ch RDS(ON) Max (m) | P-Ch VDS (V) | P-Ch ID@TA=25 (A) | P-Ch RDS(ON) Max (m) | Package | Gate Charge Typ. (nC) | Input Capacitance Typ. (pF) |
|---|---|---|---|---|---|---|---|---|---|
| HSM4606B | 30 | 7 | 26 (VGS=10V) | -30 | -7 | 35 (VGS=-10V) | SOP-8 | 5.5 (N-Ch) / 12.6 (P-Ch) | 288 (N-Ch) / 906 (P-Ch) |
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | -- | -- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=6A | -- | 18 | 26 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.2 | V |
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=5A | -- | 5.5 | -- | nC |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | -- | 288 | -- | pF |
P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | -- | -- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-6A | -- | 24 | 35 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.8 | -1.3 | -2.0 | V |
| Qg | Total Gate Charge | VDS=-15V , VGS=-10V , ID=-4A | -- | 12.6 | -- | nC |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | -- | 906 | -- | pF |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM4606B | SOP-8 | 4000/Tape&Reel |
2410121517_HUASHUO-HSM4606B_C7543687.pdf
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