N Channel Enhancement Mode MOSFET Model HYG060N08NS1P for Power Management and Switching Systems
Key Attributes
Model Number:
HYG060N08NS1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.95nF@25V
Pd - Power Dissipation:
125W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
HYG060N08NS1P
Package:
TO-220FB-3
Product Description
Product Overview
The HYG060N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)=5.5 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYG
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Model | Package Type | Drain-Source Voltage (V) | Continuous Drain Current (A) | RDS(ON) (m) | Gate-Source Voltage (V) | Junction Temperature (C) | Storage Temperature (C) | Avalanche Energy (mJ) |
|---|---|---|---|---|---|---|---|---|
| HYG060N08NS1P/B | TO-220FB-3L | 80 | 105 (Tc=25C) | 5.5 (typ. @VGS=10V) | 20 | -55 to 175 | -55 to 175 | 225 (L=0.3mH) |
| HYG060N08NS1P/B | TO-263-2L | 80 | 105 (Tc=25C) | 5.5 (typ. @VGS=10V) | 20 | -55 to 175 | -55 to 175 | 225 (L=0.3mH) |
2410121248_HUAYI-HYG060N08NS1P_C2827239.pdf
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