P channel MOSFET HUASHUO HSS3401 featuring 30V drain source voltage and super low gate charge for power switching
Key Attributes
Model Number:
HSS3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
71pF
Number:
1 P-Channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
880pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
HSS3401
Package:
SOT-23L
Product Description
Product Overview
The HSS3401 is a P-channel, 30V fast switching MOSFET featuring high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include super low gate charge and excellent CdV/dt effect decline, supported by advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current | -4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | -3.7 | A | |||
| IDM | Pulsed Drain Current2 | -16 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.95 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 100 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 70 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-4.2A | 46 | 60 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-2.5V , ID=-3A | 62 | 80 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -0.9 | -1.3 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | 2.6 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 11 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-4A | 8.5 | nC | ||
| Qgs | Gate-Source Charge | 1.8 | ||||
| Qgd | Gate-Drain Charge | 3 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-4.5V , RG=3.3, ID=-3A | 6.6 | ns | ||
| Tr | Rise Time | 3 | ns | |||
| Td(off) | Turn-Off Delay Time | 30 | ns | |||
| Tf | Fall Time | 12 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 880 | pF | ||
| Coss | Output Capacitance | 105 | pF | |||
| Crss | Reverse Transfer Capacitance | 71 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS3401 | SOT-23L | 3000/Tape&Reel |
2410122017_HUASHUO-HSS3401_C28314505.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
