N Channel MOSFET 120V HUASHUO HSU48N12A Fast Switching Component for TV Converters and Power Systems
Key Attributes
Model Number:
HSU48N12A
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
48A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.7pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.39nF@50V
Pd - Power Dissipation:
113W
Gate Charge(Qg):
20.6nC@10V
Mfr. Part #:
HSU48N12A
Package:
TO-252
Product Description
HSU48N12A N-Channel 120V Fast Switching MOSFET
The HSU48N12A is a high-performance N-channel MOSFET designed for fast switching applications. Leveraging Advanced Trench MOS Technology, this device offers 100% EAS Tested and is available as a Green Device. It is ideal for power management in TV converters and DC/DC converters, providing efficient power handling with its robust design and low on-resistance characteristics.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: N-Channel MOSFET
- Features: 100% EAS Tested, Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS | 120 | V | |||
| VGS | ±20 | V | |||
| ID@TC=25 | VGS @ 10V1 | 48 | A | ||
| ID@TC=100 | VGS @ 10V1 | 34 | A | ||
| ID@TA=25 | VGS @ 10V1 | 6.6 | A | ||
| ID@TA=100 | VGS @ 10V1 | 5.5 | A | ||
| IDM | Pulsed Drain Current2 | 150 | A | ||
| EAS | Single Pulse Avalanche Energy3 | 6 | mJ | ||
| IAS | Avalanche Current | 5 | A | ||
| PD@TC=25 | Total Power Dissipation4 | 113 | W | ||
| PD@TA=25 | Total Power Dissipation4 | 2.5 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| Thermal Data | |||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 50 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | 1.1 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=250uA) | 120 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 (VGS=10V , ID=30A) | --- | 25 | 30 | m |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =250uA) | 2.0 | 3.0 | 4.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/ |
| IDSS | Drain-Source Leakage Current (VDS=96V , VGS=0V , TJ=25) | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current (VDS=96V , VGS=0V , TJ=55) | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current (VGS=±20V , VDS=0V) | --- | --- | ±100 | nA |
| gfs | Forward Transconductance (VDS=5V , ID=20A) | --- | 50 | --- | S |
| Qg | Total Gate Charge (10V) (VDS=50V , VGS=10V , ID=20A) | --- | 20.6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.8 | --- | |
| Qgd | Gate-Drain Charge | --- | 5.3 | --- | |
| Td(on) | Turn-On Delay Time (VDD=30V , VGS=10V , RG=3.3, ID=1A) | --- | 12.6 | --- | ns |
| Tr | Rise Time | --- | 8.2 | --- | |
| Td(off) | Turn-Off Delay Time | --- | 30.8 | --- | |
| Tf | Fall Time | --- | 13.2 | --- | |
| Ciss | Input Capacitance (VDS=50V , VGS=0V , f=1MHz) | --- | 1390 | --- | pF |
| Coss | Output Capacitance | --- | 198 | --- | |
| Crss | Reverse Transfer Capacitance | --- | 3.7 | --- | |
| Diode Characteristics | |||||
| IS | Continuous Source Current1,5 (VG=VD=0V , Force Current) | --- | --- | 20 | A |
| VSD | Diode Forward Voltage2 (VGS=0V , IS=1A , TJ=25) | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time (IF=20A , dI/dt=100A/s , TJ=25) | --- | 54 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 167 | --- | nC |
Notes:
1: Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2: Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3: EAS data shows Max. rating. Test condition is VDS=25V, VGS=10V, L=0.5mH, IAS=5A.
4: Power dissipation is limited by 150 junction temperature.
5: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121655_HUASHUO-HSU48N12A_C5341696.pdf
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