100 Volt 322 Ampere N Channel MOSFET HUAYI HYG018N10NS1B6 Featuring Low RDS ON and Avalanche Tested
Key Attributes
Model Number:
HYG018N10NS1B6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
322A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
208pF
Number:
1 N-channel
Output Capacitance(Coss):
5.45nF
Input Capacitance(Ciss):
12.57nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
205nC@10V
Mfr. Part #:
HYG018N10NS1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG018N10NS1B6 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 100V/322A rating with a low RDS(ON) of 1.4m(typ.)@VGS=10V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen-Free and Green (RoHS Compliant) versions. Ideal for energy storage, battery protection, and battery-operated tools.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Certifications: RoHS Compliant, Halogen-Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | 100 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 322 | A | ||
| Pulsed Drain Current | IDM | Tc=25C * | 1288 | A | ||
| Continuous Drain Current | ID | Tc=25C | 322 | A | ||
| Continuous Drain Current | ID | Tc=100C | 228 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 375 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 187.5 | W | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | 40 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH *** | 1102 | mJ | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V,VGS=0V | - | - | 1.0 | A |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | - | - | 50 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=100A * | - | 1.4 | 1.7 | m |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=100A,VGS=0V * | - | 0.86 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=100A,dISD/dt=100A/s | - | 105 | - | ns |
| Reverse Recovery Charge | Qrr | - | 208 | - | nC | |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.1 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1MHz | - | 12570 | - | pF |
| Output Capacitance | Coss | - | 5450 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 208 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD=50V,RG=4, IDS=100A,VGS=10V | - | 43 | - | ns |
| Turn-on Rise Time | Tr | - | 110 | - | ns | |
| Turn-off Delay Time | td(OFF) | - | 109 | - | ns | |
| Turn-off Fall Time | Tf | - | 134 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=80V, VGS=10V, ID=100A | - | 205 | - | nC |
| Gate-Source Charge | Qgs | - | 65 | - | nC | |
| Gate-Drain Charge | Qgd | - | 50 | - | nC | |
2411220546_HUAYI-HYG018N10NS1B6_C2827229.pdf
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