Low On Resistance P Channel MOSFET HUAYI HYG045P06LA1B Designed for DC DC Converters and Load Switching
Key Attributes
Model Number:
HYG045P06LA1B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
444pF
Number:
1 P-Channel
Output Capacitance(Coss):
890pF
Input Capacitance(Ciss):
16.993nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
319nC@10V
Mfr. Part #:
HYG045P06LA1B
Package:
TO-263-2
Product Description
Product Overview
The HYG045P06LA1B is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a low on-resistance of 3.9m (typ.) at VGS = -10V and 4.6m (typ.) at VGS = -4.5V, 100% avalanche tested for reliability, and is Halogen Free and Green (RoHS Compliant). Ideal for DC/DC converters and load switching.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead-free, Halogen-free (Green Devices)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant
Technical Specifications
| Parameter | Condition | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | VGS=0V, IDS=-250uA | -60 | V |
| Gate-Source Voltage (VGSS) | 20 | V | |
| Maximum Junction Temperature (TJ) | 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Continuous Drain Current (ID) | Tc=25C | -160 | A |
| Continuous Drain Current (ID) | Tc=100C | -113 | A |
| Pulsed Drain Current (IDM) | Tc=25C | -710 | A |
| Maximum Power Dissipation (PD) | Tc=25C | 250 | W |
| Maximum Power Dissipation (PD) | Tc=100C | 125 | W |
| Thermal Resistance (RJC) | Junction-to-Case | 0.6 | C/W |
| Thermal Resistance (RJA) | Junction-to-Ambient | 62 | C/W |
| Single Pulsed Avalanche Energy (EAS) | L=0.3mH | 817.6 | mJ |
| Drain-Source On-state Resistance (RDS(ON)) | VGS = -10V, ID = -50A | 3.9 (typ.) | m |
| Drain-Source On-state Resistance (RDS(ON)) | VGS = -4.5V, ID = -45A | 4.6 (typ.) | m |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250uA | -1.0 to -2.5 | V |
| Input Capacitance (Ciss) | VGS=0V, VDS=-30V, Frequency=1.0MHz | 16993 (typ.) | pF |
| Output Capacitance (Coss) | 890 (typ.) | pF | |
| Reverse Transfer Capacitance (Crss) | 444 (typ.) | pF | |
| Total Gate Charge (Qg(10V)) | VDS = -30V, VGS= -10V, ID= -50A | 319 (typ.) | nC |
| Total Gate Charge (Qg(4.5V)) | 152 (typ.) | nC |
2411220228_HUAYI-HYG045P06LA1B_C2763411.pdf
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