High Cell Density Trench N Channel MOSFET HUASHUO HSU50N06 Suitable for Fast Switching Applications
Key Attributes
Model Number:
HSU50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
107pF@48V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
2.823nF@48V
Gate Charge(Qg):
23nC@4.5V
Mfr. Part #:
HSU50N06
Package:
TO-252-2
Product Description
Product Overview
The HSU50N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 55 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| IDM | Pulsed Drain Current2 | 90 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 39.2 | mJ | |||
| IAS | Avalanche Current | 38 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 45 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.8 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.057 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 11 | 16 | m |
| VGS=4.5V , ID=10A | --- | 16 | 20 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.68 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=15A | --- | 45 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=15A | --- | 23 | --- | nC |
| Qgs | Gate-Source Charge | --- | 7.1 | --- | ||
| Qgd | Gate-Drain Charge | --- | 7.6 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=15A | --- | 7.2 | --- | ns |
| Tr | Rise Time | --- | 50 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 36.4 | --- | ns | |
| Tf | Fall Time | --- | 7.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2823 | --- | pF |
| Coss | Output Capacitance | --- | 155 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 107 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 55 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 90 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | --- | --- | 1 | V |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | --- | 16.3 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 11 | --- | nC | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU50N06 | TO252-2 | 2500/Tape&Reel |
2410121641_HUASHUO-HSU50N06_C5128197.pdf
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