Low Gate Charge and High Cell Density MOSFET HUASHUO HSBB4016 for Synchronous Buck Converter Circuits
Key Attributes
Model Number:
HSBB4016
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
175pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.354nF@15V
Pd - Power Dissipation:
43W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
HSBB4016
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Green Device Available
- RoHS Compliant
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 40 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 28 | A | |||
| IDM | Pulsed Drain Current2 | 110 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 150 | mJ | |||
| IAS | Avalanche Current | 28 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 43 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 74 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.9 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | 4.9 | 6.5 | m | |
| VGS=4.5V , ID=5A | 6.4 | 8.5 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=10V , ID=5A | 27 | --- | S | |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A | 20 | --- | nC | |
| Qgs | Gate-Source Charge | 5.8 | --- | nC | ||
| Qgd | Gate-Drain Charge | 9.5 | --- | nC | ||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=1A | 15.2 | --- | ns | |
| tr | Rise Time | 8.8 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 74 | --- | ns | ||
| tf | Fall Time | 7 | --- | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2354 | --- | pF | |
| Coss | Output Capacitance | 215 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 175 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 40 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=40A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB4016 | PRPAK3*3 | 3000/Tape&Reel |
2410121502_HUASHUO-HSBB4016_C2828495.pdf
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