Fast Switching P channel MOSFET HUASHUO HSCB1216 with Excellent CdV dt Effect and RoHS Green Product
Key Attributes
Model Number:
HSCB1216
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
304pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.3nF
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
2.2W
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
HSCB1216
Package:
DFN-6L(2x2)
Product Description
Product Overview
The HSCB1216 is a P-channel 12V Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSCB1216 | Drain-Source Voltage (VDS) | -12 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -4.5V | -16 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -4.5V | -12 | A | |||
| Pulsed Drain Current (IDM) | -28 | A | ||||
| Total Power Dissipation (PD@TA=25) | 3.5 | W | ||||
| Total Power Dissipation (PD@TA=70) | 2.2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 36 | /W | ||||
| Thermal Resistance Junction-Ambient (RJC) | 6.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -12 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=-4.5V , ID=-8A | 13 | 15 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.5 | -0.75 | -1.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-12V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | 100 | nA | |||
| HSCB1216 | Forward Transconductance (gfs) | VDS=-10V , ID=-8A | 32 | S | ||
| Total Gate Charge (Qg) | VDS=-6V , VGS=-4.5V , ID=-9A | 13 | nC | |||
| Gate-Source Charge (Qgs) | 3 | |||||
| Gate-Drain Charge (Qgd) | 4.3 | |||||
| Turn-On Delay Time (Td(on)) | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-3A | 11 | ns | |||
| Rise Time (Tr) | 31 | |||||
| Turn-Off Delay Time (Td(off)) | 30 | |||||
| Fall Time (Tf) | 10 | |||||
| HSCB1216 | Input Capacitance (Ciss) | VDS=-6V , VGS=0V , f=1MHz | 1300 | pF | ||
| Output Capacitance (Coss) | 390 | |||||
| Reverse Transfer Capacitance (Crss) | 304 | |||||
| HSCB1216 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -16 | A | ||
| Pulsed Source Current (ISM) | -28 | A | ||||
| HSCB1216 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
2410121532_HUASHUO-HSCB1216_C845601.pdf
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