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quality Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance factory
quality Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance factory

Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance

Key Attributes
Model Number: HSS0008
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
1.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
310mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
16.4pF
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9.7nC@10V
Mfr. Part #:
HSS0008
Package:
SOT-23
Product Description

Product Overview

The HSS0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. The HSS0008 meets RoHS and Green Product requirements with full functional reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ 10V1 1.2 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 1 A
IDM Pulsed Drain Current2 5 A
PD@TA=25 Total Power Dissipation3 1 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 125 /W
RJC Thermal Resistance Junction-Case1 80 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON),max Static Drain-Source On-Resistance2 VGS=10V , ID=1A 260 310 m
VGS=4.5V , ID=0.5A 270 320 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=5V , ID=1A 2.4 S
Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=1A 9.7 nC
Qgs Gate-Source Charge 1.6
Qgd Gate-Drain Charge 1.7
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3 ID=1A 1.6 ns
Tr Rise Time 19 ns
Td(off) Turn-Off Delay Time 13.6 ns
Tf Fall Time 19 ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 508 pF
Coss Output Capacitance 29 pF
Crss Reverse Transfer Capacitance 16.4 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current 1.2 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 1.2 V

Notes:

  • 1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3 The power dissipation is limited by 150 junction temperature.
  • 4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Ordering Information

Part Number Package Code Packaging
HSS0008 SOT-23L 3000/Tape&Reel

2410121655_HUASHUO-HSS0008_C508452.pdf

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