High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching
Key Attributes
Model Number:
HSU30N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
8mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
94pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.2nF@10V
Pd - Power Dissipation:
40W
Gate Charge(Qg):
13nC@4.5V
Mfr. Part #:
HSU30N02
Package:
TO-252-2
Product Description
Product Overview
The HSU30N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, battery protection, and power management capabilities.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 20 | A | |||
| IDM | Pulsed Drain Current2 | 70 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 120 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 40 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | 50 | /W | ||
| RJA | Thermal Resistance Junction-Ambient 1 (t ≤10s) | --- | 25 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 3.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=30A | 6.8 | 8 | m | |
| VGS=2.5V , ID=15A | 8.3 | 10 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=10V , ID=20A | 11 | --- | --- | S |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=10V , ID=20A | --- | 13 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.9 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.2 | --- | ||
| td(on) | Turn-On Delay Time | VDD=10V , VGS=10V , RG=3.3 ID=15A | --- | 4.9 | --- | ns |
| tr | Rise Time | --- | 10 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 21 | --- | ns | |
| tf | Fall Time | --- | 3.5 | --- | ns | |
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 1200 | --- | pF |
| Coss | Output Capacitance | --- | 150 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 94 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 30 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , TJ=25 | --- | 21 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 11 | --- | nC | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU30N02 | TO252-2 | 2500/Tape&Reel | ||||
2410121656_HUASHUO-HSU30N02_C7543705.pdf
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