switching N Channel Enhancement Mode MOSFET HUAYI HY1804P suitable for power management applications
Key Attributes
Model Number:
HY1804P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-
RDS(on):
5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
239.8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.1756nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
86.2nC@10V
Mfr. Part #:
HY1804P
Package:
TO-220FB-3L
Product Description
HY1804P/B N-Channel Enhancement Mode MOSFET
The HY1804P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient switching applications and power management in DC/DC converters. It offers a robust and reliable solution with features such as 100% avalanche testing, low on-state resistance, and availability in lead-free and green (RoHS compliant) versions. The device is available in TO-220FB-3L and TO-263-2L packages.
Product Attributes
- Brand: HY (HUAYI)
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Common Ratings (Tc=25C Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | - | - | 40 | V | |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | |
| Maximum Junction Temperature | TJ | - | - | 175 | °C | |
| Storage Temperature Range | TSTG | -55 | - | 175 | °C | |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 110 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 440 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 110 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 77 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 125 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 62.5 | W |
| Thermal Resistance, Junction-to-Case | RθJC | ** | - | 1.2 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | 62.5 | - | °C/W | |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH | - | 365 | - | mJ |
| Static Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 40 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=55°C | - | - | 5 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1 | 1.8 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V,IDS=55A | - | 3.6 | 4.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=4.5V,IDS=55A | - | 4.4 | 5.5 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=55A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=55A,dISD/dt=100A/μs | - | 53 | - | ns |
| Reverse Recovery Charge | Qrr | - | 78 | - | nC | |
| Dynamic Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | - | 2.9 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4175.6 | - | pF |
| Output Capacitance | Coss | - | 406.3 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 239.8 | - | pF | |
| Turn-on Delay Time | td(ON) | VDD=20V,RG=4Ω, IDS=55A,VGS=10V | - | 20 | - | ns |
| Turn-on Rise Time | Tr | - | 23 | - | ns | |
| Turn-off Delay Time | td(OFF) | - | 26 | - | ns | |
| Turn-off Fall Time | Tf | - | 30 | - | ns | |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =32V, VGS=10V, ID=55A | - | 86.2 | - | nC |
| Gate-Source Charge | Qgs | - | 9.8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 20.1 | - | nC | |
2411220120_HUAYI-HY1804P_C358110.pdf
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