High cell density complementary MOSFET HUASHUO HSM4614 offering fast switching and power efficiency
Key Attributes
Model Number:
HSM4614
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7A;6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
18mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
1.67W
Input Capacitance(Ciss):
1.02nF@15V
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
HSM4614
Package:
SOP-8
Product Description
Product Overview
The HSM4614 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, delivering excellent RDS(ON) and gate charge for synchronous buck converter applications. These devices meet RoHS and Green Product requirements and are 100% EAS guaranteed with full function reliability approval. They offer fast switching capabilities.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM4614 (N-Ch) | Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TA=25, VGS@10V) | 7 | A | ||||
| Continuous Drain Current (ID@TA=70, VGS@10V) | 6 | A | ||||
| Pulsed Drain Current (IDM) | 23 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 16.2 | mJ | ||||
| Total Power Dissipation (PD@TA=25) | 1.67 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 75 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 30 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=5A | --- | 18 | 24 | mΩ | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =250uA | 1.0 | 1.7 | 2.5 | V | |
| HSM4614 (P-Ch) | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TA=25, VGS@10V) | -6 | A | ||||
| Continuous Drain Current (ID@TA=70, VGS@10V) | -5 | A | ||||
| Pulsed Drain Current (IDM) | -15 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 30 | mJ | ||||
| Total Power Dissipation (PD@TA=25) | 1.67 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 75 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 30 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V, ID=-5A | --- | 47 | 53 | mΩ | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -1.0 | 1.8 | -2.5 | V |
Ordering Information
| Part Number | Package | Packaging |
|---|---|---|
| HSM4614 | SOP-8 | 4000/Tape&Reel |
2410121456_HUASHUO-HSM4614_C7543688.pdf
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