power switching N Channel MOSFET HUASHUO HSST3134 with low threshold voltage and RoHS certification
Key Attributes
Model Number:
HSST3134
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
900mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
72pF
Number:
1 N-channel
Output Capacitance(Coss):
107pF
Input Capacitance(Ciss):
480pF
Pd - Power Dissipation:
250mW
Gate Charge(Qg):
4.8nC@4.5V
Mfr. Part #:
HSST3134
Package:
SOT-523
Product Description
Product Overview
The HSST3134 is a high cell density trenched N-channel MOSFET designed for fast switching and efficient performance in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full function reliability approval. Key features include fast switching speed, super low gate charge, high-side switching capability, low threshold voltage, and ESD protection up to 2KV.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
- ESD Protection: Up to 2KV
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±8 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 0.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 0.6 | A | |||
| IDM | Pulsed Drain Current2 | 4 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 500 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 300 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=800mA | 280 | 400 | m | |
| VGS=2.5V , ID=500mA | 350 | 500 | m | |||
| VGS=1.8V , ID=300mA | 650 | 800 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±10V , VDS=0V | --- | --- | ±10 | uA |
| gfs | Forward Transconductance | VDS=10V , ID=800mA | --- | 10.7 | --- | S |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=550mA | --- | 4.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 0.8 | --- | ||
| td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=10 ID=500mA | --- | 10 | --- | ns |
| tr | Rise Time | --- | 3.9 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 26 | --- | ||
| tf | Fall Time | --- | 4.8 | --- | ||
| Ciss | Input Capacitance | VDS=6V , VGS=0V , f=1MHz | --- | 480 | --- | pF |
| Coss | Output Capacitance | --- | 107 | --- | ||
| Crrs | Reverse Transfer Capacitance | --- | 72 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | 0.9 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSST3134 | SOT-523 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121434_HUASHUO-HSST3134_C700947.pdf
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