Synchronous buck converter MOSFET HUASHUO HSU6901 with complementary N channel and P channel design
Key Attributes
Model Number:
HSU6901
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
23A;18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V;70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF;70pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
86pF;97pF
Input Capacitance(Ciss):
1.378nF;1.447nF
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
12.56nC@4.5V;9.86nC@4.5V
Mfr. Part #:
HSU6901
Package:
TO-252-4
Product Description
Product Overview
The HSU6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. Designed for synchronous buck converter applications, these MOSFETs meet RoHS and Green Product requirements and are 100% EAS guaranteed with full functional reliability. They offer super low gate charge and excellent CdV/dt effect decline due to advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| HSU6901 N-Ch and P-Ch Fast Switching MOSFETs | ||
|---|---|---|
| Parameter | Rating | Units |
| Absolute Maximum Ratings | ||
| Drain-Source Voltage (N-Channel) | 60 | V |
| Drain-Source Voltage (P-Channel) | -60 | V |
| Gate-Source Voltage | 20 | V |
| Continuous Drain Current, VGS @ 10V (N-Ch, TC=25) | 23 | A |
| Continuous Drain Current, VGS @ 10V (P-Ch, TC=25) | -18 | A |
| Continuous Drain Current, VGS @ 10V (N-Ch, TC=100) | 15 | A |
| Continuous Drain Current, VGS @ 10V (P-Ch, TC=100) | -11 | A |
| Continuous Drain Current, VGS @ 10V (N-Ch, TA=25) | 5.6 | A |
| Continuous Drain Current, VGS @ 10V (P-Ch, TA=25) | -4.3 | A |
| Continuous Drain Current, VGS @ 10V (N-Ch, TA=70) | 4.5 | A |
| Continuous Drain Current, VGS @ 10V (P-Ch, TA=70) | -3.5 | A |
| Pulsed Drain Current (N-Ch) | 46 | A |
| Pulsed Drain Current (P-Ch) | -36 | A |
| Single Pulse Avalanche Energy (N-Ch) | 34.5 | mJ |
| Single Pulse Avalanche Energy (P-Ch) | 51.2 | mJ |
| Avalanche Current (N-Ch) | 22.6 | A |
| Avalanche Current (P-Ch) | -26.6 | A |
| Total Power Dissipation (TC=25) | 34.7 | W |
| Total Power Dissipation (TA=25) | 2 | W |
| Storage Temperature Range | -55 to 150 | |
| Operating Junction Temperature Range | -55 to 150 | |
| Thermal Data | ||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W |
| Thermal Resistance Junction-Case (RJC) | 3.6 | /W |
| Product Summary | ||
| Model | HSU6901 | |
| Type | N-Ch and P-Ch Fast Switching MOSFETs | |
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||
| Drain-Source Breakdown Voltage (BVDSS) | 60 | V |
| Static Drain-Source On-Resistance (RDS(ON)) (VGS=10V, ID=15A) | 32 | m |
| Continuous Drain Current (ID) (VGS @ 10V, TC=25) | 23 | A |
| Gate Threshold Voltage (VGS(th)) | 1.2 - 2.5 | V |
| P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||
| Drain-Source Breakdown Voltage (BVDSS) | -60 | V |
| Static Drain-Source On-Resistance (RDS(ON)) (VGS=-10V, ID=-12A) | 70 | m |
| Continuous Drain Current (ID) (VGS @ -10V, TC=25) | -18 | A |
| Gate Threshold Voltage (VGS(th)) | -1.2 - -2.5 | V |
Note: Detailed electrical characteristics and typical performance curves for both N-Channel and P-Channel are provided in the original datasheet.
2410121456_HUASHUO-HSU6901_C701019.pdf
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