Low RDS ON dual N channel MOSFET HUASHUO HSO8205 20V fast switching device ideal for Lithium ion battery packs
Key Attributes
Model Number:
HSO8205
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
148pF@8V
Number:
2 N-Channel
Input Capacitance(Ciss):
522pF@8V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
HSO8205
Package:
TSSOP-8
Product Description
Product Overview
The HSO8205 is a dual N-channel, 20V fast switching MOSFET designed with advanced high cell density Trench technology. It features low RDS(ON) and super low gate charge, making it suitable for Lithium-ion battery pack applications. The HSO8205 meets RoHS and Green Product requirements with full function reliability approval. It offers excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Green Device Available
- RoHS Compliant
- Green Product Requirement Met
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSO8205 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID@TA=25) | 6 | A | ||||
| Continuous Drain Current (ID@TA=70) | 5.4 | A | ||||
| Pulsed Drain Current (IDM) | 24 | A | ||||
| Total Power Dissipation (PD@TA=25) | 1.5 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 83 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=6A | 27 | m | |||
| HSO8205 | Static Drain-Source On-Resistance (RDS(ON),max) | VGS=2.5V , ID=5.2A | 38 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.9 | 1.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | 1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±12V , VDS=0V | ±100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=3.5A | 21 | S | |||
| Total Gate Charge (Qg) (4.5V) | VDS=10V , VGS=4.5V , ID=3A | 6.1 | nC | |||
| Gate-Source Charge (Qgs) | 1.7 | nC | ||||
| Gate-Drain Charge (Qgd) | 1.4 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=10V , VGS=4.5V , RG=3 ID=1A | 10 | ns | |||
| Rise Time (Tr) | 8.2 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 2.5 | ns | ||||
| HSO8205 | Fall Time (Tf) | 6 | ns | |||
| Input Capacitance (Ciss) | VDS=8V , VGS=0V , f=1MHz | 522 | pF | |||
| Output Capacitance (Coss) | 124 | pF | ||||
| HSO8205 | Reverse Transfer Capacitance (Crss) | 148 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 6 | A | |||
| HSO8205 | Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2409272301_HUASHUO-HSO8205_C700965.pdf
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