Fast Switching N Channel P Channel MOSFETs HUASHUO HSBB0903 Series for Industrial Power Applications
Key Attributes
Model Number:
HSBB0903
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
6A;4.2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
100mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
29pF@30V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.229nF@30V
Pd - Power Dissipation:
7.8W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
HSBB0903
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB0903 series offers N-Channel and P-Channel Fast Switching MOSFETs designed for power management and DC motor control applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline, utilizing advanced high cell density Trench technology. They are available as Green Devices.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available
Technical Specifications
| HSBB0903 N-Ch and P-Ch Fast Switching MOSFETs | |||
|---|---|---|---|
| Parameter | Rating | Units | Notes |
| Absolute Maximum Ratings | |||
| VDS (Drain-Source Voltage) | 100 (N-Ch) / -100 (P-Ch) | V | |
| VGS (Gate-Source Voltage) | 20 | V | |
| ID@TA=25 (Continuous Drain Current, VGS @ 10V) | 2.6 (N-Ch) / -1.8 (P-Ch) | A | 1 |
| ID@TA=100 (Continuous Drain Current, VGS @ 10V) | 1.6 (N-Ch) / -1.1 (P-Ch) | A | 1 |
| ID@TC=25 (Continuous Drain Current, VGS @ 10V) | 6 (N-Ch) / -4.2 (P-Ch) | A | 1 |
| ID@TC=100 (Continuous Drain Current, VGS @ 10V) | 3.8 (N-Ch) / -2.6 (P-Ch) | A | 1 |
| IDM (Pulsed Drain Current) | 20 (N-Ch) / -20 (P-Ch) | A | 2 |
| EAS (Single Pulse Avalanche Energy) | 25 (N-Ch) / 49 (P-Ch) | mJ | 3 |
| IAS (Avalanche Current) | 10 (N-Ch) / -14 (P-Ch) | A | |
| PD@TC=25 (Total Power Dissipation) | 7.8 (N-Ch & P-Ch) | W | 4 |
| TSTG (Storage Temperature Range) | -55 to 150 | ||
| TJ (Operating Junction Temperature Range) | -55 to 150 | ||
| Thermal Data | |||
| RJA (Thermal Resistance Junction-Ambient) | --- | 85 /W | |
| RJC (Thermal Resistance Junction-Case) | --- | 16 /W | 1 |
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | |||
| BVDSS (Drain-Source Breakdown Voltage) | 100 | V | VGS=0V , ID=250uA |
| RDS(ON) (Static Drain-Source On-Resistance) | 100 | m | VGS=10V , ID=2.5A 2 |
| RDS(ON) (Static Drain-Source On-Resistance) | 125 | m | VGS=4.5V , ID=2A 2 |
| VGS(th) (Gate Threshold Voltage) | 1.2 to 2.7 | V | VGS=VDS , ID =250uA |
| IDSS (Drain-Source Leakage Current) | 1 | uA | VDS=80V , VGS=0V , TJ=25 |
| IDSS (Drain-Source Leakage Current) | 30 | uA | VDS=80V , VGS=0V , TJ=55 |
| IGSS (Gate-Source Leakage Current) | 100 | nA | VGS=20V , VDS=0V |
| Qg (Total Gate Charge) | 15 | nC | VDS=50V , VGS=4.5V , ID=2A |
| Td(on) (Turn-On Delay Time) | 8 | ns | VDD=30V , VGS=10V , RG=3.3, ID=1A |
| Tr (Rise Time) | 12 | ns | |
| Td(off) (Turn-Off Delay Time) | 20 | ns | |
| Tf (Fall Time) | 6 | ns | |
| Ciss (Input Capacitance) | 990 | pF | VDS=30V , VGS=0V , f=1MHz |
| Coss (Output Capacitance) | 36 | pF | |
| Crss (Reverse Transfer Capacitance) | 24 | pF | |
| IS (Continuous Source Current) | 6 | A | VG=VD=0V , Force Current 1,5 |
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V , IS=1A , TJ=25 2 |
| P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | |||
| BVDSS (Drain-Source Breakdown Voltage) | -100 | V | VGS=0V , ID=-250uA |
| RDS(ON) (Static Drain-Source On-Resistance) | 220 | m | VGS=-10V , ID=-2A 2 |
| RDS(ON) (Static Drain-Source On-Resistance) | 255 | m | VGS=-4.5V , ID=-1.6A 2 |
| VGS(th) (Gate Threshold Voltage) | -1.2 to -2.5 | V | VGS=VDS , ID =-250uA |
| IDSS (Drain-Source Leakage Current) | 1 | uA | VDS=-80V , VGS=0V , TJ=25 |
| IDSS (Drain-Source Leakage Current) | 30 | uA | VDS=-80V , VGS=0V , TJ=55 |
| IGSS (Gate-Source Leakage Current) | 100 | nA | VGS=20V , VDS=0V |
| Qg (Total Gate Charge) | 19 | nC | VDS=-50V , VGS=-10V , ID=-2A |
| Td(on) (Turn-On Delay Time) | 9 | ns | VDD=-30V , VGS=-10V , RG=3.3, ID=-1A |
| Tr (Rise Time) | 6 | ns | |
| Td(off) (Turn-Off Delay Time) | 38 | ns | |
| Tf (Fall Time) | 33 | ns | |
| Ciss (Input Capacitance) | 1229 | pF | VDS=-30V , VGS=0V , f=1MHz |
| Coss (Output Capacitance) | 41 | pF | |
| Crss (Reverse Transfer Capacitance) | 29 | pF | |
| IS (Continuous Source Current) | -4.2 | A | VG=VD=0V , Force Current 1,5 |
| VSD (Diode Forward Voltage) | -1.2 | V | VGS=0V , IS=-1A , TJ=25 2 |
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V (N-Ch) / -25V (P-Ch), VGS=10V / -10V, L=0.5mH, IAS=10A / -14A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121656_HUASHUO-HSBB0903_C7543696.pdf
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