Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and small power load control
Key Attributes
Model Number:
HSS2300A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
68pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
670pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
8.6nC@4.5V
Mfr. Part #:
HSS2300A
Package:
SOT-23
Product Description
Product Overview
The HSS2300A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Technology: Trench
- Compliance: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 6.0 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 5.0 | A | |||
| IDM | Pulsed Drain Current2 | 17 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.66 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 120 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.018 | --- | V/ |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=4A | --- | 21 | 26 | mΩ |
| VGS=2.5V , ID=3A | --- | 28 | 35 | VGS | ||
| VGS=1.8V , ID=2A | --- | 40 | 50 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.35 | --- | 1.0 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | -3.1 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=4A | --- | 30 | --- | S |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=4A | --- | 8.6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.37 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | nC | |
| td(on) | Turn-On Delay Time | VDS=10V , VGS=4.5V , RG=3.3Ω ID=4A | --- | 5.2 | --- | ns |
| tr | Rise Time | --- | 34 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 23 | --- | ns | |
| tf | Fall Time | --- | 9.2 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 670 | --- | pF |
| Coss | Output Capacitance | --- | 75 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 68 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | --- | 6 | A |
| ISM | Pulsed Source Current2,4 | --- | --- | 17 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Ordering Information | ||||||
| Part Number | Package Code | Packaging | ||||
| HSS2300A | SOT-23 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121531_HUASHUO-HSS2300A_C518780.pdf
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