N Channel Enhancement Mode MOSFET HUAYI HY3606P Designed for Switching Applications and Power Management
Key Attributes
Model Number:
HY3606P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
162A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
334pF
Number:
1 N-channel
Output Capacitance(Coss):
857pF
Input Capacitance(Ciss):
4.376nF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
HY3606P
Package:
TO-220FB-3
Product Description
Product Overview
The HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. The device has undergone 100% avalanche testing for enhanced reliability.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Parameter | Rating | Unit | Conditions |
| HY3606P/B | Drain-Source Voltage (VDSS) | 60 | V | |
| Gate-Source Voltage (VGSS) | 25 | V | ||
| Maximum Junction Temperature (TJ) | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||
| Continuous Drain Current (ID) | 162 (TC=25C) / 105 (TC=100C) | A | Mounted on Large Heat Sink | |
| Maximum Power Dissipation (PD) | 214 (TC=25C) / 107 (TC=100C) | W | ||
| Thermal Resistance-Junction to Case (RJC) | 0.7 | C/W | ||
| Thermal Resistance-Junction to Ambient (RJA) | 62.5 | C/W | ||
| Avalanche Energy (EAS) | mJ | L=0.5mH | ||
| Drain-Source On-state Resistance (RDS(ON)) | m (typ.) | VGS=10V | ||
| Static Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 60 | V | VGS=0V, IDS=250A |
| Zero Gate Voltage Drain Current (IDSS) | 1 (VDS=60V, VGS=0V) / 10 (TJ=85C) | A | ||
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VDS=VGS, IDS=250A | |
| Gate Leakage Current (IGSS) | 100 | nA | VGS=25V, VDS=0V | |
| Diode Forward Voltage (VSD) | 0.8 - 1.2 | V | ISD=81A, VGS=0V | |
| Reverse Recovery Time (trr) | 30 | ns | ||
| Reverse Recovery Charge (Qrr) | 52 | nC | ISD=81A, dlSD/dt=100A/s | |
| Dynamic Characteristics | Gate Resistance (RG) | 0.7 | VGS=0V,VDS=0V,F=1MHz | |
| Input Capacitance (Ciss) | 4376 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Output Capacitance (Coss) | 857 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 334 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Turn-on Delay Time (td(ON)) / Turn-on Rise Time (Tr) / Turn-off Delay Time (td(OFF)) / Turn-off Fall Time (Tf) | 28 / 54 / 42 / 54 | ns | VDD=30V, RG=6 , IDS =81A, VGS=10V | |
| Gate Charge Characteristics | Total Gate Charge (Qg) | 130 | nC | VDS=48V, VGS=10V, IDS=81A |
| Gate-Source Charge (Qgs) | 24 | nC | VDS=48V, VGS=10V, IDS=81A | |
| Gate-Drain Charge (Qgd) | 47 | nC | VDS=48V, VGS=10V, IDS=81A |
2411220737_HUAYI-HY3606P_C275493.pdf
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