P Channel 40V MOSFET HUASHUO HSBA4113 Featuring Fast Switching and Low Gate Charge for Power Conversion
Key Attributes
Model Number:
HSBA4113
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V,12A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.004nF@15V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
HSBA4113
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4113 is a P-channel, 40V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Part Number | Description | Rating | Unit |
|---|---|---|---|
| HSBA4113 | Drain-Source Voltage (VDS) | -40 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID @ TC=25, -VGS @ -10V) | -27 | A | |
| Continuous Drain Current (ID @ TC=100, -VGS @ -10V) | -17 | A | |
| Continuous Drain Current (ID @ TA=25, -VGS @ -10V) | -5.9 | A | |
| Continuous Drain Current (ID @ TA=100, -VGS @ -10V) | -4.7 | A | |
| Pulsed Drain Current (IDM) | -54 | A | |
| Single Pulse Avalanche Energy (EAS) | 42 | mJ | |
| Avalanche Current (IAS) | -29 | A | |
| Total Power Dissipation (PD @ TC=25) | 42 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) | -40 | V | |
| Static Drain-Source On-Resistance (RDS(ON),max @ VGS=-10V, ID=-18A) | 40 | m | |
| Static Drain-Source On-Resistance (RDS(ON),max @ VGS=-4.5V, ID=-12A) | 65 | m | |
| Gate Threshold Voltage (VGS(th) @ ID =-250uA) | -1.0 to -2.5 | V | |
| Drain-Source Leakage Current (IDSS @ VDS=-32V, VGS=0V, TJ=25) | 1 | uA | |
| Gate-Source Leakage Current (IGSS @ VGS=20V, VDS=0V) | 100 | nA | |
| Total Gate Charge (Qg @ VDS=-20V, VGS=-4.5V, ID=-12A) | 9 | nC | |
| Input Capacitance (Ciss @ VDS=-15V, VGS=0V, f=1MHz) | 1004 | pF | |
| Output Capacitance (Coss @ VDS=-15V, VGS=0V, f=1MHz) | 108 | pF | |
| Reverse Transfer Capacitance (Crss @ VDS=-15V, VGS=0V, f=1MHz) | 80 | pF | |
| Continuous Source Current (IS @ VG=VD=0V) | -23 | A | |
| Pulsed Source Current (ISM) | -46 | A | |
| Diode Forward Voltage (VSD @ IS=-1A, TJ=25) | -1 | V | |
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | |
| Thermal Resistance Junction-Case (RJC) | 3 | /W |
| Package Code | Packaging | Quantity |
|---|---|---|
| PRPAK5*6 | Tape&Reel | 3000 |
2301040930_HUASHUO-HSBA4113_C5341691.pdf
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