Fast switching N channel MOSFET HUASHUO HSM20N02 designed for battery protection and power management
Key Attributes
Model Number:
HSM20N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
500pF
Input Capacitance(Ciss):
3.4nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
83nC@4.5V
Mfr. Part #:
HSM20N02
Package:
SOP-8
Product Description
Product Overview
The HSM20N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for applications such as battery protection and power management.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM20N02 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=20A | --- | 2.9 | 5.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=10A | --- | 3.5 | 7 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.75 | 1.2 | V | |
| VGS(th) Temperature Coefficient (VGS(th)) | --- | --- | -6.16 | --- | mV/ | |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | --- | --- | 100 | nA | |
| Total Gate Charge (Qg) | VDS=10V , VGS=4.5V , ID=10A | --- | 83 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | --- | 5 | --- | nC | |
| Gate-Drain Charge (Qgd) | --- | --- | 11 | --- | nC | |
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | --- | 3400 | --- | pF | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | --- | --- | --- | 20 | V |
| Gate-Source Voltage (VGS) | --- | --- | --- | 12 | V | |
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | --- | --- | 20 | A | |
| Thermal Data | Total Power Dissipation (PD@TC=25) | --- | --- | --- | 3.1 | W |
| Storage Temperature Range (TSTG) | --- | -55 | --- | 150 | ||
| Operating Junction Temperature Range (TJ) | --- | -55 | --- | 150 | ||
| Thermal Resistance Junction-Case (RJC) | --- | --- | --- | 24 | /W | |
| Ordering Information | Package | --- | SOP-8 | --- | --- | --- |
| Ordering Information | Packaging | --- | 4000/Tape&Reel | --- | --- | --- |
2410121653_HUASHUO-HSM20N02_C2828486.pdf
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