HSK4101 P channel MOSFET featuring trench technology and fast switching for power management devices
Key Attributes
Model Number:
HSK4101
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
53pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
620pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
HSK4101
Package:
SOT-89
Product Description
Product Overview
The HSK4101 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key features include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HSK
- Product Type: P-Ch MOSFETs
- Technology: Trench
- Certifications: RoHS, Green Product
- Availability: Green Device Available
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSK4101 | Drain-Source Voltage (VDS) | -40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -4.5V1 | -5.8 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ -4.5V1 | -5.0 | A | |||
| Pulsed Drain Current (IDM)2 | -20 | A | ||||
| Total Power Dissipation (PD@TA=25)3 | 1.4 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -40 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max)2 | VGS=-4.5V , ID=-3A | 70 | m | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-2.5V , ID=-2A | 100 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg) | VDS=-32V , VGS=-4.5V , ID=-3A | 6.4 | nC | |||
| HSK4101 | Continuous Source Current (IS)1,4 | VG=VD=0V , Force Current | -5.8 | A | ||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | -1 | V |
| Parameter | Typ. | Max. | Units |
|---|---|---|---|
| Thermal Resistance Junction-Ambient (RJA) | --- | 125 | /W |
| Thermal Resistance Junction-Case (RJC)1 | --- | 85 | /W |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSK4101 | SOT-89 | 4000/Tape&Reel |
2410121642_HUASHUO-HSK4101_C5341683.pdf
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