Power Management N Channel MOSFET HUASHUO HSBB3058 30V Fast Switching Device with Excellent CdVdt Performance
Product Overview
The HSBB3058 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. It is 100% EAS guaranteed and available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available, 100% EAS Guaranteed
Technical Specifications
| Model | Type | Voltage (VDS) | Current (ID) | RDS(ON) Typ. (m) | Gate Charge Typ. (nC) | Package | Ordering Information |
|---|---|---|---|---|---|---|---|
| HSBB3058 | N-Channel | 30V | 28A (Continuous @ TC=25) | 6 m (at VGS=10V) | 7.1 nC (Total Gate Charge) | PRPAK3*3 | 3000/Tape&Reel |
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 28 | A | ||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 20 | A | ||
| Pulsed Drain Current (IDM) | 100 | A | |||
| Single Pulse Avalanche Energy (EAS) | 39 | mJ | |||
| Avalanche Current (IAS) | 28 | A | |||
| Total Power Dissipation (PD@TC=25) | 21 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Data | |||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 65 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS Temperature Coefficient (BVDSS/TJ) | Reference to 25 , ID=1mA | --- | 0.021 | --- | V/ |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=12A | --- | 6 | 8 | m |
| VGS=4.5V , ID=12A | --- | 9.4 | 11 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| VGS(th) Temperature Coefficient (VGS(th)) | --- | -5.73 | --- | mV/ | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Forward Transconductance (gfs) | VDS=5V , ID=12A | --- | 55 | --- | S |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 0.8 | 1.7 | 2.6 | |
| Total Gate Charge (Qg) | VDS=15V , VGS=10V , ID=12A | --- | 7.1 | --- | nC |
| Gate-Source Charge (Qgs) | --- | 2.2 | --- | nC | |
| Gate-Drain Charge (Qgd) | --- | 3.1 | --- | nC | |
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3, ID=12A | --- | 7 | --- | ns |
| Rise Time (Tr) | --- | 19 | --- | ns | |
| Turn-Off Delay Time (Td(off)) | --- | 19.5 | --- | ns | |
| Fall Time (Tf) | --- | 3.4 | --- | ns | |
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 693 | --- | pF |
| Output Capacitance (Coss) | --- | 332 | --- | pF | |
| Reverse Transfer Capacitance (Crss) | --- | 34 | --- | pF | |
| Diode Characteristics | |||||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 28 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Applications
- Power Management in Desktop Computer or DC/DC Converters
- Isolated DC/DC Converters in Telecom and Industrial
2410121503_HUASHUO-HSBB3058_C701037.pdf
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