Power Management N Channel MOSFET HUASHUO HSBB3058 30V Fast Switching Device with Excellent CdVdt Performance

Key Attributes
Model Number: HSBB3058
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
34pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
693pF@15V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
7.1nC@4.5V
Mfr. Part #:
HSBB3058
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB3058 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors. It is 100% EAS guaranteed and available as a Green Device.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Certifications: Green Device Available, 100% EAS Guaranteed

Technical Specifications

Model Type Voltage (VDS) Current (ID) RDS(ON) Typ. (m) Gate Charge Typ. (nC) Package Ordering Information
HSBB3058 N-Channel 30V 28A (Continuous @ TC=25) 6 m (at VGS=10V) 7.1 nC (Total Gate Charge) PRPAK3*3 3000/Tape&Reel
Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID@TC=25) VGS @ 10V 28 A
Continuous Drain Current (ID@TC=100) VGS @ 10V 20 A
Pulsed Drain Current (IDM) 100 A
Single Pulse Avalanche Energy (EAS) 39 mJ
Avalanche Current (IAS) 28 A
Total Power Dissipation (PD@TC=25) 21 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Data
Thermal Resistance Junction-Ambient (RJA) --- 65 /W
Thermal Resistance Junction-Case (RJC) --- 6 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 30 --- --- V
BVDSS Temperature Coefficient (BVDSS/TJ) Reference to 25 , ID=1mA --- 0.021 --- V/
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=12A --- 6 8 m
VGS=4.5V , ID=12A --- 9.4 11 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.2 1.7 2.2 V
VGS(th) Temperature Coefficient (VGS(th)) --- -5.73 --- mV/
Drain-Source Leakage Current (IDSS) VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
VDS=24V , VGS=0V , TJ=55 --- --- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V , ID=12A --- 55 --- S
Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz 0.8 1.7 2.6
Total Gate Charge (Qg) VDS=15V , VGS=10V , ID=12A --- 7.1 --- nC
Gate-Source Charge (Qgs) --- 2.2 --- nC
Gate-Drain Charge (Qgd) --- 3.1 --- nC
Turn-On Delay Time (Td(on)) VDD=15V , VGS=10V , RG=3, ID=12A --- 7 --- ns
Rise Time (Tr) --- 19 --- ns
Turn-Off Delay Time (Td(off)) --- 19.5 --- ns
Fall Time (Tf) --- 3.4 --- ns
Input Capacitance (Ciss) VDS=15V , VGS=0V , f=1MHz --- 693 --- pF
Output Capacitance (Coss) --- 332 --- pF
Reverse Transfer Capacitance (Crss) --- 34 --- pF
Diode Characteristics
Continuous Source Current (IS) VG=VD=0V , Force Current --- --- 28 A
Diode Forward Voltage (VSD) VGS=0V , IS=1A , TJ=25 --- --- 1 V

Applications

  • Power Management in Desktop Computer or DC/DC Converters
  • Isolated DC/DC Converters in Telecom and Industrial

2410121503_HUASHUO-HSBB3058_C701037.pdf

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