Power switching N-channel MOSFET HUASHUO HSX120N20 featuring low RDS ON and high current capability
Key Attributes
Model Number:
HSX120N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
120A
RDS(on):
11mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
467pF
Pd - Power Dissipation:
500W
Input Capacitance(Ciss):
3.52nF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
HSX120N20
Package:
TO-247
Product Description
Product Overview
The HSX120N20 is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is designed for power switching applications and offers an excellent Cdv/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS and Green Product requirement
- Reliability: 100% EAS guaranteed with full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 92 | A | |||
| IDM | Pulsed Drain Current2 | 520 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 845 | mJ | |||
| PD@TC=25 | Total Power Dissipation3 | 500 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 40 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.36 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 8.9 | 11 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.5 | 3.3 | 4.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=200V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=200V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 5.0 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=100V , VGS=10V , ID=20A | 46 | --- | nC | |
| Qgs | Gate-Source Charge | 20 | --- | |||
| Qgd | Gate-Drain Charge | 12 | --- | |||
| td(on) | Turn-On Delay Time | VDD=100V , VGS=10V , RG=2.5 , ID=20A | 21 | --- | ns | |
| tr | Rise Time | 22 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 32 | --- | ns | ||
| tf | Fall Time | 23 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 3520 | --- | pF | |
| Coss | Output Capacitance | 467 | --- | |||
| Crss | Reverse Transfer Capacitance | 37 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 120 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=30A , TJ=25 | --- | 1.2 | V | |
| trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/s | 133 | --- | ns | |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/s | 677 | --- | nC | |
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410122016_HUASHUO-HSX120N20_C22359324.pdf
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