N Channel MOSFET HUASHUO HSS4002 40V Fast Switching Trench Technology Device Suitable for Load Switch
Key Attributes
Model Number:
HSS4002
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
56pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
593pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.5nC@4.5V
Mfr. Part #:
HSS4002
Package:
SOT-23L
Product Description
Product Overview
The HSS4002 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. The HSS4002 meets RoHS and Green Product requirements, ensuring full function reliability.Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Device Available
Technical Specifications
| Product Summary | HSS4002 | Unit | |
|---|---|---|---|
| N-Ch 40V Fast Switching MOSFETs | |||
| Absolute Maximum Ratings | |||
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 5 | A |
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 4.1 | A |
| IDM | Pulsed Drain Current | 16 | A |
| PD@TA=25 | Total Power Dissipation | 1.25 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 | |
| Thermal Data | |||
| RJA | Thermal Resistance Junction-ambient | --- | 100 /W |
| RJC | Thermal Resistance Junction-Case | --- | 60 /W |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||
| BVDSS | Drain-Source Breakdown Voltage | 40 | V |
| RDS(ON),max | Static Drain-Source On-Resistance | 32 | m |
| VGS(th) | Gate Threshold Voltage | 1.0 to 2.5 | V |
| IDSS | Drain-Source Leakage Current | 1 | uA |
| IGSS | Gate-Source Leakage Current | ±100 | nA |
| Qg | Total Gate Charge | 5.5 | nC |
| Td(on) | Turn-On Delay Time | 8.9 | ns |
| Tr | Rise Time | 2.2 | ns |
| Td(off) | Turn-Off Delay Time | 41 | ns |
| Tf | Fall Time | 2.7 | ns |
| Ciss | Input Capacitance | 593 | pF |
| Coss | Output Capacitance | 76 | pF |
| Crss | Reverse Transfer Capacitance | 56 | pF |
| Diode Characteristics | |||
| IS | Continuous Source Current | 5 | A |
| ISM | Pulsed Source Current | 16 | A |
| VSD | Diode Forward Voltage | 1.2 | V |
| Ordering Information | |||
| Part Number | Package code | Packaging | |
| HSS4002 | SOT-23L | 3000/Tape&Reel | |
2410121448_HUASHUO-HSS4002_C700957.pdf
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