P channel mosfet huashuo hss3415e with 20v drain source breakdown voltage and enhanced esd protection
Key Attributes
Model Number:
HSS3415E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
205pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
900pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
HSS3415E
Package:
SOT-23L
Product Description
Product Overview
The HSS3415E is a P-channel, 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and ESD protection (2KV). It is available as a Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- ESD Protection: 2KV
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSS3415E | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | --- | -0.014 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V, ID=-3.5A | --- | 35 | 45 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V, ID=-3A | --- | 47 | 55 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-1.8V, ID=-2A | --- | 67 | 80 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS, ID =-250uA | -0.45 | --- | -0.9 | V | |
| VGS(th) Temperature Coefficient | --- | --- | 3.95 | --- | mV/ | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V, VGS=0V, TJ=25 | --- | --- | -1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V, VGS=0V, TJ=55 | --- | --- | -5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=12V, VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=-5V, ID=-3A | --- | 12.8 | --- | S | |
| Total Gate Charge (Qg) (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-3A | --- | 8.4 | 11 | nC | |
| Input Capacitance (Ciss) | VDS=-15V, VGS=0V, f=1MHz | --- | --- | 900 | pC | |
| HSS3415E | Continuous Drain Current (ID) | TA=25, VGS @ -4.5V | --- | --- | -4.3 | A |
| Continuous Drain Current (ID) | TA=70, VGS @ -4.5V | --- | --- | -3.5 | A | |
| Pulsed Drain Current (IDM) | --- | --- | -14 | A | ||
| HSS3415E | Total Power Dissipation (PD) | TA=25 | --- | --- | 1.25 | W |
| Total Power Dissipation (PD) | TA=70 | --- | --- | 0.84 | W | |
| HSS3415E | Storage Temperature Range (TSTG) | --- | -55 | --- | 150 | |
| Operating Junction Temperature Range (TJ) | --- | -55 | --- | 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | --- | --- | 100 | /W | ||
| HSS3415E | Thermal Resistance Junction-Ambient (RJA) | (t 10s) | --- | --- | 95 | /W |
| HSS3415E | Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | -4.3 | A |
| Pulsed Source Current (ISM) | --- | --- | -14 | A | ||
| HSS3415E | Diode Forward Voltage (VSD) | VGS=0V, IS=-1A, TJ=25 | --- | --- | -1 | V |
| Reverse Recovery Time (trr) | IF=-3A, di/dt=100A/s, TJ=25 | --- | 21.8 | --- | nS | |
| HSS3415E | Reverse Recovery Charge (Qrr) | --- | --- | 6.9 | --- | nC |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSS3415E | SOT-23L | Tape&Reel | 3000 |
2410121629_HUASHUO-HSS3415E_C518775.pdf
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