Dual N channel MOSFET HSW6822 featuring fast switching and high cell density for load switch operation
Key Attributes
Model Number:
HSW6822
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
22mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
2 N-Channel
Output Capacitance(Coss):
69pF
Pd - Power Dissipation:
1.7W
Input Capacitance(Ciss):
480pF
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
HSW6822
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6822 is a dual N-channel fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. The HSW6822 meets RoHS and Green Product requirements and has undergone full functional reliability approval. It is ideal for PWM applications and load switching.Product Attributes
- Brand: HSW
- Product Type: Dual N-CH Fast Switching MOSFETs
- Compliance: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSW6822 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID) @ TA=25 | VGS @ 4.5V1 | 5 | A | |||
| Continuous Drain Current (ID) @ TA=70 | VGS @ 4.5V1 | 4 | A | |||
| Pulsed Drain Current (IDM)2 | 20 | A | ||||
| Total Power Dissipation (PD) @ TA=253 | 1.7 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 90 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=4.5V , ID=5A | 17 | 22 | m | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=2.5V , ID=3A | 24 | 30 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.4 | 0.75 | 1.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=5A | 29 | S | |||
| Total Gate Charge (Qg) (4.5V) | VDS=10V , VGS=4.5V , ID=5A | 6.5 | nC | |||
| Gate-Source Charge (Qgs) | 0.9 | nC | ||||
| Gate-Drain Charge (Qgd) | 1.3 | nC | ||||
| Turn-On Delay Time (td(on)) | VDD=10V , VGS=4.5V , RG=6 , ID=5A | 4 | ns | |||
| Rise Time (tr) | 21 | ns | ||||
| Turn-Off Delay Time (td(off)) | 16 | ns | ||||
| Fall Time (tf) | 9 | ns | ||||
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | 480 | pF | |||
| Output Capacitance (Coss) | 69 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 63 | pF | ||||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2410121628_HUASHUO-HSW6822_C22359228.pdf
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