Power electronics MOSFET HUASHUO HSP8119 P channel with low gate charge and high cell density design
Key Attributes
Model Number:
HSP8119
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF@40V
Number:
1 P-Channel
Pd - Power Dissipation:
210W
Input Capacitance(Ciss):
13.3nF@40V
Gate Charge(Qg):
190nC@10V
Mfr. Part #:
HSP8119
Package:
TO-220
Product Description
Product Overview
The HSP8119 is a P-channel, 80V fast switching MOSFET designed for synchronous buck converter applications. It features high cell density, excellent RDS(ON), and low gate charge. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers excellent CdV/dt effect decline. It is manufactured using advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSP8119 | Drain-Source Voltage (VDS) | -80 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TC=25 | -VGS @ -10V1 | -90 | A | |||
| Continuous Drain Current (ID) @ TC=100 | -VGS @ -10V1 | -60 | A | |||
| Pulsed Drain Current (IDM)2 | -270 | A | ||||
| Single Pulse Avalanche Energy (EAS)3 | 710 | mJ | ||||
| Avalanche Current (IAS) | 63 | A | ||||
| Total Power Dissipation (PD) @ TC=254 | 210 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | ||||
| Thermal Resistance Junction-Case (RJC)1 | 0.73 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -80 | V | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-10V , ID=-20A | 13.5 | 15 | m | ||
| VGS=-4.5V , ID=-10A | 14.5 | 17 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-80V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=-80V , VGS=0V , TJ=55 | 10 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Gate Resistance (Rg) | VGS=0V, VDS=0V, f=1.0MHz | 1.7 | ||||
| Forward Transconductance (gfs) | VDS=-10V , ID=-3A | 30 | S | |||
| Total Gate Charge (Qg) | VDS=-40V , VGS=-10V , ID=-10A | 190 | nC | |||
| Gate-Source Charge (Qgs) | 29 | nC | ||||
| Gate-Drain Charge (Qgd) | 55 | nC | ||||
| Turn-On Delay Time (td(on)) | VDD=-40V , VGS=-10V , RG=6, ID=-10A | 25 | ns | |||
| Rise Time (tr) | 20 | ns | ||||
| Turn-Off Delay Time (td(off)) | 180 | ns | ||||
| Fall Time (tf) | 88 | ns | ||||
| Input Capacitance (Ciss) | VDS=-40V , VGS=0V , f=1MHz | 13300 | pF | |||
| Output Capacitance (Coss) | 390 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 50 | pF | ||||
| Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | -90 | A | |||
| Pulsed Source Current (ISM)2,5 | -270 | A | ||||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |||
| Reverse Recovery Time (trr) | IF=-20A, di/dt=100A/s | 35 | ns | |||
| Reverse Recovery Charge (Qrr) | IF=-20A, di/dt=100A/s | 45 | nC |
2410122016_HUASHUO-HSP8119_C22359314.pdf
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