High cell density trenched N channel MOSFET HUASHUO HSS5N10 suitable for synchronous buck converters

Name: High cell density trenched N channel MOSFET HUASHUO HSS5N10 suitable for synchronous buck converters
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: HSS5N10
Availability: InStock

Key Attributes

Model Number: HSS5N10

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

Operating Temperature -:

-55℃~+150℃

RDS(on):

130mΩ@4.5V

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

34pF@50V

Number:

1 N-channel

Input Capacitance(Ciss):

1.008nF@50V

Pd - Power Dissipation:

1.4W

Gate Charge(Qg):

9nC@10V

Mfr. Part #:

HSS5N10

Package:

SOT-23L

Product Description

Product Overview

HSS5N10 is a high cell density trenched N-channel MOSFET designed for excellent R_DS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements with full function reliability approval. It offers a super low gate charge and excellent C_dv/dt effect decline, leveraging advanced high cell density trench technology.

Product Attributes

Brand: HS-Semi
Product Type: N-Channel Fast Switching MOSFET
Certifications: RoHS, Green Product

Technical Specifications

General Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	100	---	---	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=4A	---	100	120	m
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V , ID=3A	---	105	130	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
IDSS	Drain-Source Leakage Current	VDS=100V , VGS=0V , TJ=25	---	---	1	A
IDSS	Drain-Source Leakage Current	VDS=100V , VGS=0V , TJ=55	---	---	10	A
IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V	---	---	100	nA
Qg	Total Gate Charge (10V)	VDS=50V , VGS=10V , ID=3A	---	9	---	nC
Qgs	Gate-Source Charge	---	1.5	---	nC
Qgd	Gate-Drain Charge	---	0.9	---	nC
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10V , RG=2 ID=3A	---	3.3	---	ns
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10V , RG=2 ID=3A	---	3.3	---	ns
Tr	Rise Time	---	21	---	ns
Td(off)	Turn-Off Delay Time	---	15	---	ns
Tf	Fall Time	---	6.8	---	ns
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz	---	1008	---	pF


Coss	Output Capacitance	---	40	---	pF
Crss	Reverse Transfer Capacitance	---	34	---	pF

Diode Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
IS	Continuous Source Current	VG=VD=0V , Force Current	---	---	5	A
VSD	Diode Forward Voltage	VGS=0V , IS=1A , TJ=25	---	---	1.2	V

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	20	V
ID@TA=25	Continuous Drain Current, VGS @ 10V	5	A
ID@TA=100	Continuous Drain Current, VGS @ 10V	4	A
IDM	Pulsed Drain Current	15	A
PD@TA=25	Total Power Dissipation	1.4	W
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Thermal Data

Symbol	Parameter	Conditions	Typ.	Max.	Unit
RJA	Thermal Resistance Junction-ambient	(steady state)	---	125	/W
RJA	Thermal Resistance Junction-ambient	(t<10s)	---	80	/W

Ordering Information

Part Number	Package Code	Packaging
HSS5N10	SOT-23L	3000/Tape&Reel

2410122026_HUASHUO-HSS5N10_C22359217.pdf

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